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PDF FDH210N08 Data sheet ( Hoja de datos )
| Número de pieza | FDH210N08 | |
| Descripción | N-Channel UniFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDH210N08
N-Channel UniFETTM MOSFET
75 V, 210 A, 5.5 mΩ
Features
• RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A
• Low Gate Charge (Typ. 232 nC)
• Low Crss (Typ. 262 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
December 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-247
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
MaximumLead Temperature for Soldering,
1/8 from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
1
S
FDH210N08
75
210
132
840
± 20
9375
210
46.2
4.5
462
3.7
-55 to +175
300
FDH210N08
0.27
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
www.fairchildsemi.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t pp Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDH210N08.PDF ] | |
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