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UT3418 PDF даташит

Спецификация UT3418 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR».

Детали детали

Номер произв UT3418
Описание N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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UT3418 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
UT3418
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UT3418 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) < 60m@VGS = 10 V
* RDS(ON) < 70m@VGS = 4.5 V
* RDS(ON) < 155m@VGS = 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT3418G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UT3418 Даташит, Описание, Даташиты
UT3418
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
VDSS 30 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current
ID 3.8 A
Pulsed Drain Current (Note 2)
IDM 15 A
Power Dissipation
PD 1.4 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θJA
MIN
TYP
MAX
UNIT
100 125 °C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250μA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS VDS=24V, VGS=0V
0.001 1 µA
Gate-Source Leakage Current
IGSS VGS=±12V, VDS=0V
100 nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1 1.4 1.8 V
VGS=10V, ID=3.8A
43 60 m
Drain-Source On-State Resistance
RDS(ON) VGS=4.5V, ID=3.5A
52 70 m
VGS=2.5V, ID=1A
101 155 m
On-State Drain Current
ID(ON) VDS=5V, VGS=4.5V
15
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
226 270 pF
Output Capacitance
COSS VDS=15V, VGS=0V, f=1.0MHz
39
pF
Reverse Transfer Capacitance
CRSS
29 pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
2.6 4 ns
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=15V,RL =3.9,
VGS =10V, RG=6
3.2 5
14.5 22
ns
ns
Turn-OFF Fall-Time
tF
2.1 3 ns
Total Gate Charge
Gate Source Charge
Gate Drain Charge
QG
QGS
QGD
VDS=15V, VGS=4.5V,
ID=3.8A
3 3.6
1.4
0.55
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD IS=1A, VGS=0V
0.81 1
V
Maximum Body-Diode Continuous Current
IS
2.5 A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
IF=3.8A, dI/dt=100A/μs
10.2 13
3.8 5
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT3418 Даташит, Описание, Даташиты
UT3418
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
300 Breakdown Voltage
250
200
150
100
50
0
0 10 20 30 40 50
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State
5 Resistance Characteristics
4
VGS=10V
3
VGS=4.5V
2
1
VGS=2.5V
0
0
50
100 150
200
Drain to Source Voltage, VDS (mV)
Power MOSFET
Drain Current vs.
300 Gate Threshold Voltage
250
200
150
100
50
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Gate Threshold Voltage, VTH (V)
Drain Current vs.
1.2 Source to Drain Voltage
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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