2SJ271 PDF даташит
Спецификация 2SJ271 изготовлена «Sanyo Semicon Device» и имеет функцию, называемую «P-Channel Silicon MOS FET». |
|
Детали детали
Номер произв | 2SJ271 |
Описание | P-Channel Silicon MOS FET |
Производители | Sanyo Semicon Device |
логотип |
1 Pages
No Preview Available ! |
2SJ271
P- Channel Silicon MOS FET
Very High-Speed Switching Applications
Features and Applications
• Low ON-state resistance.
• Very high-speed switching.
• Low-voltage dreve.
TENTATIVE
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (D.C)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP PW≤10µS, dutycycle≤1%
PD Tc=25°C
Tch
Tstg
--100
±15
--15
--60
70
150
--55 to +150
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Gate to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(OFF)
| yfs |
RDS(On)1
RDS(On)1
Ciss
Coss
Crss
td(On)
tr
td(Off)
tf
VSD
ID=--1mA , VGS=0
ID=±100µA , VGS=0
VDS=--100V , VGS=0
VGS=±12V , VDS=0
VDS=--10V , ID=--1mA
VDS=--10V , ID=--8A
ID=--8A , VGS=--10V
ID=--8A , VGS=--4V
VDS=--20V , f=1MHz
VDS=--20V , f=1MHz
VDS=--20V , f=1MHz
See Specified Test
Circuit .
IS =--15A , VGS = 0
unit
V
V
A
A
W
°C
°C
min
--100
±15
typ
--1.0
7.5 13
0.12
0.16
1900
400
80
18
25
300
120
--1.0
max
--100
±10
--2.0
0.16
0.22
--1.5
unit
V
V
µA
µA
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
V
Switching Time Test Circuit
VIN
0V
--10V
PW=10uS
D.C≤1%
VIN
VDD=--50V
ID=--8A
RL=--6.25Ω
VOUT
P.G 50Ω
Elecrical Connection
D
G
S
Case Outline TO-220 (unit:mm)
10.0
φ3.2
4.5
2.8
1.6
1.2
0.75
123
2.55 2.55
2.4
0.7
Specifications and information herein are subject to change without notice.
1 : Gate
2 : Drain
2.55 2.55 3 : Source
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990929TM2fXHD
Скачать PDF:
[ 2SJ271.PDF Даташит ]
Номер в каталоге | Описание | Производители |
2SJ271 | P-Channel Silicon MOS FET | Sanyo Semicon Device |
2SJ272 | P-Channel Silicon MOSFET | Sanyo Semicon Device |
2SJ273 | P-Channel Silicon MOSFET | Sanyo Semicon Device |
2SJ274 | P-Channel Silicon MOSFET | Sanyo Semicon Device |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |