DataSheet26.com

2SJ271 PDF даташит

Спецификация 2SJ271 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «P-Channel Silicon MOS FET».

Детали детали

Номер произв 2SJ271
Описание P-Channel Silicon MOS FET
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

1 Pages
scroll

No Preview Available !

2SJ271 Даташит, Описание, Даташиты
2SJ271
P- Channel Silicon MOS FET
Very High-Speed Switching Applications
Features and Applications
• Low ON-state resistance.
• Very high-speed switching.
• Low-voltage dreve.
TENTATIVE
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (D.C)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP PW10µS, dutycycle1%
PD Tc=25°C
Tch
Tstg
--100
±15
--15
--60
70
150
--55 to +150
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Gate to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(OFF)
| yfs |
RDS(On)1
RDS(On)1
Ciss
Coss
Crss
td(On)
tr
td(Off)
tf
VSD
ID=--1mA , VGS=0
ID=±100µA , VGS=0
VDS=--100V , VGS=0
VGS=±12V , VDS=0
VDS=--10V , ID=--1mA
VDS=--10V , ID=--8A
ID=--8A , VGS=--10V
ID=--8A , VGS=--4V
VDS=--20V , f=1MHz
VDS=--20V , f=1MHz
VDS=--20V , f=1MHz
See Specified Test
Circuit .
IS =--15A , VGS = 0
unit
V
V
A
A
W
°C
°C
min
--100
±15
typ
--1.0
7.5 13
0.12
0.16
1900
400
80
18
25
300
120
--1.0
max
--100
±10
--2.0
0.16
0.22
--1.5
unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
Switching Time Test Circuit
VIN
0V
--10V
PW=10uS
D.C1%
VIN
VDD=--50V
ID=--8A
RL=--6.25
VOUT
P.G 50
Elecrical Connection
D
G
S
Case Outline TO-220 (unit:mm)
10.0
φ3.2
4.5
2.8
1.6
1.2
0.75
123
2.55 2.55
2.4
0.7
Specifications and information herein are subject to change without notice.
1 : Gate
2 : Drain
2.55 2.55 3 : Source
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990929TM2fXHD










Скачать PDF:

[ 2SJ271.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2SJ271P-Channel Silicon MOS FETSanyo Semicon Device
Sanyo Semicon Device
2SJ272P-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device
2SJ273P-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device
2SJ274P-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск