MDS3652 PDF даташит
Спецификация MDS3652 изготовлена «MagnaChip» и имеет функцию, называемую «Single P-Channel Trench MOSFET». |
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Детали детали
Номер произв | MDS3652 |
Описание | Single P-Channel Trench MOSFET |
Производители | MagnaChip |
логотип |
6 Pages
No Preview Available ! |
MDS3652
Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ
General Description
The MDS3652 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance, high
switching performance and excellent reliability
Features
VDS = -30V
ID = -11A @VGS = -10V
RDS(ON)
< 17mΩ @VGS = -10V
< 27mΩ @VGS = -4.5V
Applications
Load Switch
General purpose applications
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
S
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation(1)
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
-30
±20
-11
-7
-60
3.1
1.2
60
-55~150
Rating
40
25
Unit
V
V
A
A
A
W
mJ
oC
Unit
oC/W
Jul 2011. Version 1.1
1 MagnaChip Semiconductor Ltd.
No Preview Available ! |
Ordering Information
Part Number
MDS3652URH
Temp. Range
-55~150oC
Package
SOIC-8
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (Ta = 25oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gFS
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = -250μA, VGS = 0V
VDS = VGS, ID = -250μA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = -10V, ID = -11A
VGS = -4.5V, ID = -6A
VDS = -5V, ID = -11A
VDS = -15V, ID = -11A,
VGS = -10V
VDS = -15V, VGS = 0V,
f = 1.0MHz
VGS = -10V ,VDS = -15V,
RL = 2.7Ω, RGEN = 3Ω
IS = 1A, VGS = 0V
IF = -11A, di/dt = 100A/μs
Min
-30
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. Starting TJ = 25°C, L = 1mH, IAS = 11A, VDD = 15V, VGS = 10V
Typ
-
-1.9
-
13
21
25
35
7.8
6.2
1770
150
350
13.0
26.8
34.4
17.4
-0.75
27
12
Max
-
-3.0
-1
±0.1
17
27
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
mΩ
S
nC
pF
ns
V
ns
nC
Jul 2011. Version 1.1
2 MagnaChip Semiconductor Ltd.
No Preview Available ! |
50
-10.0V -6.0V
45 -5.0V
-4.5V
40
35
30 -4.0V
25
20
15 -3.5V
10
5 VGS=-3.0V
0
01234
-VDS [V]
Fig.1 On-Region Characteristics
5
1.8
*Note; I =-11A
D
1.6
1.4
VGS=-10V
V =-4.5V
GS
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100
T,
J
Junction
Temperature
[℃
]
125
Fig.3 On-Resistance Variation with
Temperature
150
50
40
VGS=-4.5V
30
20 VGS=-10V
10
0
0 5 10 15
-I [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
50
*Note ; ID=-11A
45
40
35
125℃
30
25
25℃
20
15
10
4 5 6 7 8 9 10
-VGS [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
* Note ; VDS=-5V
15
10
5
125℃
25℃
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS [V]
Fig.5 Transfer Characteristics
Jul 2011. Version 1.1
3
10
1
0.1
0.01
1E-3
125℃
25℃
1E-4
0.0 0.2 0.4 0.6 0.8 1.0
-VSD [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.
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