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AUIRGP35B60PD-E Datasheet PDF Download - International Rectifier

Номер произв AUIRGP35B60PD-E
Описание WARP2 SERIES IGBT
Производители International Rectifier
логотип International Rectifier логотип 
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AUIRGP35B60PD-E Даташит, Описание, Даташиты
AUTOMOTIVE GRADE
PD - 97619
AUIRGP35B60PD-E
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Lead-Free, RoHS Compliant
Automotive Qualified*
Applications
PFC and ZVS SMPS Circuits
DC/DC Converter Charger
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150KHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
Equivalent MOSFET
Parameters
RCE(on) typ. = 84m
ID (FET equivalent) = 35A
C
G
Gate
E
C
G
TO-247AD
AUIRGP35B60PD-E
C
Collector
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
600
60
34
120
120
40
15
60
±20
308
123
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
––– ––– 0.41
––– ––– 1.7
––– 0.50 –––
––– –––
40
––– 6.0 (0.21) –––
°C/W
g (oz)
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com
http://oneic.com/
01/11/10
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AUIRGP35B60PD-E Даташит, Описание, Даташиты
AUIRGP35B60PD-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 0.78 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance
— 1.7 — 1MHz, Open Collector
— 1.85 2.15
IC = 22A, VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.25 2.55 V IC = 35A, VGE = 15V
— 2.37 2.80
IC = 22A, VGE = 15V, TJ = 125°C
— 3.00 3.45
IC = 35A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 4.0 5.0 V IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance
— 36 — S VCE = 50V, IC = 22A, PW = 80µs
ICES Collector-to-Emitter Leakage Current
— 3.0 375 µA VGE = 0V, VCE = 600V
— 0.35 — mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop
— 1.30 1.70 V IF = 15A, VGE = 0V
— 1.20 1.60
IF = 15A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig
4, 5,6,8,9
7,8,9
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg Total Gate Charge (turn-on)
— 160 240
IC = 22A
17
Qgc Gate-to-Collector Charge (turn-on)
— 55 83 nC VCC = 400V
CT1
Qge Gate-to-Emitter Charge (turn-on)
— 21 32
VGE = 15V
Eon Turn-On Switching Loss
— 220 270
IC = 22A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 215 265 µJ VGE = +15V, RG = 3.3, L = 200µH
— 435 535
fTJ = 25°C
td(on)
Turn-On delay time
— 26 34
IC = 22A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
— 6.0 8.0 ns VGE = +15V, RG = 3.3, L = 200µH
— 110 122
TJ = 25°C fÃÃ
tf Fall time
— 8.0 10
Eon Turn-On Switching Loss
— 410 465
IC = 22A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 330 405 µJ VGE = +15V, RG = 3.3, L = 200µH
— 740 870
fTJ = 125°C
11,13
WF1,WF2
td(on)
Turn-On delay time
— 26 34
IC = 22A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
— 8.0 11 ns VGE = +15V, RG = 3.3, L = 200µH
— 130 150
TJ = 125°CÃfÃÃ
12,14
WF1,WF2
tf Fall time
— 12 16
Cies Input Capacitance
— 3715 —
VGE = 0V
16
Coes Output Capacitance
— 265 —
VCC = 30V
Cres
Coes eff.
Coes eff. (ER)
Reverse Transfer Capacitance
gEffective Output Capacitance (Time Related)
gEffective Output Capacitance (Energy Related)
— 47 — pF f = 1Mhz
— 135 —
VGE = 0V, VCE = 0V to 480V
— 179 —
15
TJ = 150°C, IC = 120A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time
— 42 60 ns TJ = 25°C IF = 15A, VR = 200V,
19
— 74 120
TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge
— 80 180 nC TJ = 25°C IF = 15A, VR = 200V,
21
— 220 600
TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current
— 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V,
19,20,21,22
— 6.5 10
TJ = 125°C di/dt = 200A/µs
CT5
Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
http:/2/oneic.com/
www.irf.com
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AUIRGP35B60PD-E Даташит, Описание, Даташиты
AUIRGP35B60PD-E
Qualification Information
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
TO-247
MSL1
Class M4 (425V)†††
AEC-Q101-002
Class H2 (4000V)†††
AEC-Q101-001
Class C5 (1125V)†††
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
www.irf.com
http://oneic.com/
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