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BTA410Y-600CT Datasheet PDF Download - NXP

Номер произв BTA410Y-600CT
Описание 3Q Hi-Com Triac
Производители NXP
логотип NXP логотип 
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BTA410Y-600CT Даташит, Описание, Даташиты
BTA410Y-600CT
3Q Hi-Com Triac
9 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)
internally insulated plastic package. This "series CT" triac will commutate the full RMS
current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a
snubber. It is used in applications where "high junction operating temperature capability"
is required.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High Tj(max)
Isolated mounting base with 2500 V (RMS) isolation
Less sensitive gate for high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Electronic thermostats (heating and cooling)
Motor Controls
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
VDRM
ITSM
Tj
IT(RMS)
Quick reference data
Parameter
Conditions
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
junction temperature
RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
Min Typ Max Unit
- - 600 V
- - 100 A
- - 150 °C
- - 10 A
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BTA410Y-600CT Даташит, Описание, Даташиты
NXP Semiconductors
BTA410Y-600CT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
2-
2-
2-
35 mA
35 mA
35 mA
500 - - V/µs
8 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
123
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA410Y-600CT
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
BTA410Y-600CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13

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BTA410Y-600CT Даташит, Описание, Даташиты
NXP Semiconductors
BTA410Y-600CT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; sine-wave pulse
dIT/dt
rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
12
IT(RMS)
(A)
8
003aaj475
120 °C
25
IT(RMS)
(A)
20
15
Min Max Unit
- 600 V
- 10 A
- 100 A
- 110 A
- 50 A2s
- 100 A/µs
- 2A
- 5W
- 0.5 W
-40 125 °C
- 150 °C
003aaj474
10
4
5
Fig. 1.
0
-50 0 50 100 150
Tmb (°C)
0 10-2
10-1
1 10
surge duration (s)
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz; Tmb = 120 °C
RMS on-state current as a function of surge
duration; maximum values
BTA410Y-600CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 13






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