PDF PTF102015 Data sheet ( Hoja de datos )

Número de pieza	PTF102015
Descripción	Field Effect Transistor
Fabricantes	Ericsson
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No Preview Available ! PRELIMINARY PTF 102015* GOLDMOS® Field Effect Transistor 30 Watts, 2110-2170 MHz Description The PTF 102015 is a 30–watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 13 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. WCDMA Performance 20 VDS = 28 V 16 IDQ = 320 mA fC = 2170 12 Ef f icienc y 8 ACPR1 (FC + 5 MHz) 4 -20 -35 -50 0 ACPR2 (FC + 10 MHz) -65 0 0.5 1 1.5 2 2.5 3 3.5 4 • Typical WCDMA Performance - Average Output Power = 3.2 Watts - Gain = 14 dB - Efficiency = 17 % (Channel Bandwidth 4.096 MHz) • Typical CW Performance - Output Power at P-1dB = 34 Watts - Gain = 13 dB - Efficiency = 47 % • Full Gold Metallization • Integrated ESD Protection • Excellent Thermal Stability • Broadband Internal Matching • Low HCI Drift • Will Handle 10:1 VSWR at 28 V, 30 W e 102015 Average Output Power (W) Guaranteed Performance Package 20265 Two-Tone Measurements VDD = 28 V, POUT = 30 W (PEP), IDQ = 320 mA, fC = 2.17 GHz, Tone Spacing = 1 MHz Characteristic Symbol Min Gain Drain Efficiency Gps 13 hD 34 Intermodulation Distortion IMD — Typ — — -32 Max — — -28 Units dB % dBc WCDMA Measurements Single Carrier 3GPP, Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 9.0:1, POUT= 3 W, f = 2.17 GHz Characteristic Symbol Min Typ Max Unit Adjacent Channel Power Ratio Gain ACPR — -46 -42 dB Gps 13 — — dB Drain Efficiency hD 13.0 — — % All published data at TCASE = 25°C unless otherwise indicated. * Note: Specification is preliminary and subject to change. Order this product or obtain additional information from your Ericsson Sales Representative. e 1 1 page e Test Circuit PRELIMINARY PTF 102015 Schematic for f = 2170 MHz DUT l1 l2 l3 l4 l5 l6 l7 l8 l9 l 10 PTF 102015 0.187 l 2170 MHz 0.074 l 2170 MHz 0.093 l 2170 MHz 0.050 l 2170 MHz 0.125 l 2170 MHz 0.051 l 2170 MHz 0.322 l 2170 MHz 0.057 l 2170 MHz 0.018 l 2170 MHz 0.105 l 2170 MHz LDMOS Device Microstrip 52 W Microstrip 24 W Microstrip 44.7 W Microstrip 12.25 W Microstrip 76.5 W Microstrip 12.25 W Microstrip 52 W Microstrip 3.0 W Microstrip 15 W Microstrip 52 W C1, C10 C2, C8 C3, C4, C7, C11 C5 C6 C9 C12 R1, R2 J1, J2 L1 Circuit Board Capacitor, 10 µF, 35V Digi-Key PC56106-ND Capacitor, 0.1 µF, 50V Digi-Key PCC103BCT-ND Capacitor, 11 pF 100A 110 Capacitor, 1.2 pF 100A 1R2 Capacitor, 1.8 pF 100A 1R8 Capacitor, 100 µF, 50 V Digi-Key P5182-ND Capacitor, 0.8 pF 100A 0R8 Resistor, 220 W, 1/8 W Digi-Key 220ECT-ND SMA Female Connector, Panel Mount Ferrite, 6mm Philips 53/3/4.6-452 .030" thick, 2 oz. copper Cirexx TMM4 Test Circuit Assembly Drawing (not to scale) 5 5 Page

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Número de pieza	Descripción	Fabricantes
PTF102015	Field Effect Transistor	Ericsson

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