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1N914 PDF даташит

Спецификация 1N914 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «High-speed diode».

Детали детали

Номер произв 1N914
Описание High-speed diode
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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1N914 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N914
High-speed diode
Product specification
Supersedes data of 1996 Sep 03
1999 May 26









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1N914 Даташит, Описание, Даташиты
Philips Semiconductors
High-speed diode
Product specification
1N914
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak forward current:
max. 225 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The 1N914 is a high-speed switching diode fabricated in planar technology, and
encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
handbook, halfpagke
a
The diode is type branded.
MAM246
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
MIN.
MAX.
100
75
75
225
UNIT
V
V
mA
mA
4A
1A
0.5 A
250 mW
65 +200 °C
175 °C
1999 May 26
2









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1N914 Даташит, Описание, Даташиты
Philips Semiconductors
High-speed diode
Product specification
1N914
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
IR reverse current
Cd diode capacitance
trr reverse recovery time
Vfr forward recovery voltage
CONDITIONS
IF = 10 mA; see Fig.3
see Fig.5
VR = 20 V
VR = 75 V
VR = 20 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ; measured at
IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 ; measured at
IR = 1 mA; see Fig.7
when switched from IF = 50 mA; tr = 20 ns;
see Fig.8
MAX. UNIT
1V
25 nA
5 µA
50 µA
4 pF
8 ns
4 ns
2.5 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
VALUE
240
500
UNIT
K/W
K/W
1999 May 26
3










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