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C3092SH-DTC PDF даташит

Спецификация C3092SH-DTC изготовлена ​​​​«PerkinElmer Optoelectronics» и имеет функцию, называемую «Silicon Avalanche Photodiodes».

Детали детали

Номер произв C3092SH-DTC
Описание Silicon Avalanche Photodiodes
Производители PerkinElmer Optoelectronics
логотип PerkinElmer Optoelectronics логотип 

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C3092SH-DTC Даташит, Описание, Даташиты
Silicon Avalanche Photodiodes
C30902 Series
High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications
Overview
PerkinElmer’s C30902EH avalanche
photodiode is fabricated with a double-
diffused “reach-through” structure. This
structure provides high responsivity
between 400 and 1000 nm as well as
extremely fast rise and fall times at all
wavelengths. The responsivity of the
device is independent of modulation
frequency up to about 800 MHz. The
detector chip is hermetically-sealed
behind a flat glass window in a modified
TO-18 package. The useful diameter of
the photosensitive surface is 0.5 mm.
PerkinElmer’s C30921EH is packaged in
a lightpipe TO-18 which allows efficient
coupling of light to the detector from
either a focused spot or an optical fiber
up to 0.25 mm in diameter.
The hermetically-sealed TO-18 package
allows fibers to be epoxied to the end of
the lightpipe to minimize signal losses
without fear of endangering detector
stability.
The C30902SH and C30921SH are
selected C30902EH and C30921EH
photodiodes having extremely low noise
and bulk dark-current. They are intended
for ultra-low light level applications
(optical power less than 1 pW) and can
be used in either their normal linear mode
(VR<VBR) at gains up to 250 or greater, or
as photon counters in the “Geiger” mode
(VR > VBR) where a single photoelectron
may trigger an avalanche pulse of about
108 carriers. In this mode, no amplifiers
are necessary and single-photon
detection probabilities of up to
approximately 50% are possible.
Photon-counting is also advantageous
where gating and coincidence techniques
are employed for signal retrieval.
Features and Benefits
High quantum efficiency of
77% typical @ 830 nm
C30902SH and C30921SH
can be operated in “Geiger”
mode
Hermetically sealed package
Low Noise at room
temperature
High responsivity – internal
avalanche gains in excess of
150
Spectral response range –
(10% points) 400 to 1000 nm
Time response – typically 0.5
ns
Wide operating temperature
range - -40°C to +70°C
RoHS-compliant
Applications
LIDAR
Laser range finder
Small-signal fluorescence
Photon counting
www.optoelectronics.perkinelmer.com









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C3092SH-DTC Даташит, Описание, Даташиты
Table of Contents
Table 1. Electrical Characteristics
Optical Characteristics
Maximum Ratings, Absolute-Maximum Values (All Types)
“- TC” and “- DTC” TE-Cooled Version
RoHS Compliance
Custom Designs
Geiger Mode Operation
Passive-Quenching Circuit
Active-Quenching Circuit
Timing Resolution
After-Pulsing
Dark Current
“Your Partner of Choice”
3
4
4
4
5
5
10
11
12
12
12
12
13
www.optoelectronics.perkinelmer.com
Silicon Avalanche Photodiodes
2









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C3092SH-DTC Даташит, Описание, Даташиты
Table 1. Electrical Characteristics
@ TA = 22°C unless otherwise indicated
C30902EH, C30921EH
C30902SH, C30921SH
C3092SH-TC, C3092SH-DTC
Breakdown voltage, VBR
Temperature coefficient of VR for
constant gain
Detector Temperature: 5
- TC
- DTC
Gain
Responsivity:
@ 900 nm
@ 830 nm
Quantum efficiency:
@ 900 nm
@ 830 nm
Dark current, Id
- TC
- DTC
Noise current, in: 2
- TC
- DTC
Capacitance, Cd
Rise time, tr:
RL = 50, λ = 830 nm,
10% to 90% points
Fall time:
RL = 50, λ = 830 nm,
90% to 10% points
TEC max current
- TC
- DTC
TEC max voltage
- TC
- DTC
Dark count rate at 5% photon
detection probability 3 (830 nm,
case temperature of 22°C)
(see Figure 10)
Voltage above VBR for 5% photon
detection probability 3 (830 nm)
(see Figure 8)
After-pulse ratio at 5% photon
detection probability (830 nm)
22°C 4
Min
0.5
55
70
Typ
225
0.7
150
65
77
60
77
15
0.23
1.6
0.5
0.5
Max Min
0.9 0.5
Typ
225
0.7
92
117
30
250
108
128
60
77
15
0.5 0.11
2 1.6
Max Min
Typ
0.9
0
-20
250
108
128
60
77
30
2
1
0.2
0.04
0.02
2 1.6
Max Units
V
V/°C
°C
A/W
%
nA
pA/Hz1/2
2 pF
0.75 0.5 0.75 0.5
ns
0.75
0.5 0.75
5,000
15,000
0.5
1.8
1.4
0.8
2
1,100 (-TC)
250 ( - DTC)
ns
A
V
cps
2
2 15
2
2
V
%
Note 1: At the DC reverse operating voltage VR supplied with the device and a light spot diameter of 0.25 mm (C30902EH, SH) or
0.10 mm (C30921EH, SH). Note that a specific value of VR is supplied with each device. When the photodiode is operated at this
voltage, the device will meet the electrical characteristic limits shown above. The voltage value will be within the range of 180 to 250
volts.
Note 2: The theoretical expression for shot noise current in an avalanche photodiode is in = (2q (Ids + (IdbM2 + PORM) F) BW) ½ where q
is the electronic charge, Ids is the dark surface current, Idb is the dark bulk current, F is the excess noise factor, M is the gain, PO is the
optical power on the device, and BW is the noise bandwidth. For these devices F = 0.98 (2-1/M) + 0.02 M. (Reference: PP Webb, RJ
McIntyre, JJ Conradi, “RCA Review”, Vol. 35 p. 234, (1974)).
Note 3: The C30902SH and C309021SH can be operated at a substantially higher detection probability. (see Geiger Mode
Operation).
Note 4: After-pulse occurring 1 microsecond to 60 seconds after main pulse.
Note 5: A thermistor of 5 K@ 25 °C and 43 K@ -25 °C can be used to monitor the detector temperature.
www.optoelectronics.perkinelmer.com
Silicon Avalanche Photodiodes
3










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Номер в каталогеОписаниеПроизводители
C3092SH-DTCSilicon Avalanche PhotodiodesPerkinElmer Optoelectronics
PerkinElmer Optoelectronics

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