BC856A PDF даташит
Спецификация BC856A изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistors». |
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Детали детали
Номер произв | BC856A |
Описание | PNP general purpose transistors |
Производители | NXP Semiconductors |
логотип |
10 Pages
No Preview Available ! |
DISCRETE SEMICONDUCTORS
DATA SHEET
BC856; BC857; BC858
PNP general purpose transistors
Product data sheet
Supersedes data of 2003 Apr 09
2004 Jan 16
No Preview Available ! |
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
MARKING
TYPE NUMBER
BC856
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858B
MARKING CODE(1)
3D*
3A*
3B*
3H*
3E*
3F*
3G*
3K*
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
handbook, halfpage
3
1
Top view
1
2
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BC856
BC857
BC858
NAME
−
−
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
VERSION
SOT23
SOT23
SOT23
2004 Jan 16
2
No Preview Available ! |
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BC856
BC857
BC858
collector-emitter voltage
BC856
BC857
BC858
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
MIN.
MAX.
UNIT
− −80 V
− −50 V
− −30 V
− −65 V
− −45 V
− −30 V
− −5 V
−
−100
mA
−
−200
mA
−
−200
mA
− 250 mW
−65
+150
°C
− 150 °C
−65
+150
°C
TYPICAL
500
UNIT
K/W
2004 Jan 16
3
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