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PDF MTP2301N3 Data sheet ( Hoja de datos )
| Número de pieza | MTP2301N3 | |
| Descripción | 20V P-CHANNEL Enhancement Mode MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTP2301N3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 1/9
20V P-Channel Enhancement Mode MOSFET
MTP2301N3
BVDSS
ID
RDSON(TYP)@VGS=-4.5V, ID=-2.8A
RDSON(TYP)@VGS=-2.5V, ID=-2A
-20V
-3.4A
79mΩ
116mΩ
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTP2301N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
GS
Ordering Information
Device
MTP2301N3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP2301N3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1
ID=-1mA
0.8
100 C oss
Crss
10
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Single Pulse Power Rating, Junction to Ambient
(Note 1 on page 2)
50
40
TJ(MAX)=150°C
TA=25°C
30
20
10
0
0.001 0.01
0.1
1
10 100
Pulse Width(s)
Maximum Safe Operating Area
100
10
1
TA=25°C, Tj=150°C,
0.1 VGS=-4.5V, RθJA=90°C/W
Single Pulse
10μs
100μs
1ms
10ms
100ms
DC
0.01
0.01
0.1 1 10
-VDS, Drain-Source Voltage(V)
100
0.6
ID=-250μA
0.4
0.2
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
Gate Charge Characteristics
5
4
3
VDS=-10V
ID=-3A
2
1
0
02 46
Qg, Total Gate Charge(nC)
8
Maximum Drain Current vs JunctionTemperature
4
3.5
3
2.5
2
1.5
1
0.5 TA=25°C, VGS=-10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTP2301N3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTP2301N3.PDF ] | |
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