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PDF LMBT2222ALT3G Data sheet ( Hoja de datos )
| Número de pieza | LMBT2222ALT3G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
●FEATURES
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT2222ALT1G
1P
3000/Tape&Reel
LMBT2222ALT3G
1P
10000/Tape&Reel
LMBT2222ALT1G
S-LMBT2222ALT1G
3
1
2
SOT-23
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
●THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction–to–Ambient(Note 1)
Total Device Dissipation,
Alumina Substrate (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction–to–Ambient
Junction and Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina.
Symbol
VCEO
VCBO
VEBO
IC
Limits
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
PD
RΘJA
PD
RΘJA
TJ,Tstg
225
1.8
556
300
2.4
417
−55∼+150
mW
mW/℃
℃/W
mW
mW/℃
℃/W
℃
June,2015
Rev.A 1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LMBT2222ALT1G,S-LMBT2222ALT1G
1.8
1.6 VCE=1V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.001
0.01
0.1
IC, Collector Current (A)
1
-55℃
25℃
150℃
Figure 5. Base Emitter Voltage vs. Collector Current
1000
100
VCE=1V
10
1
0.0001
0.001
0.01
0.1
IC,Collector Current
(A)
Figure 7. Current−Gain Bandwidth Product
1
3.5E-11
3.0E-11
2.5E-11
2.0E-11
1.5E-11
1.0E-11
5.0E-12
0.0E+00
0.1
1 10
VR, Reverse Voltage (V)
Cobo
Cibo
Figure 6. Capacitance
100
June,2015
Rev.A 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LMBT2222ALT3G.PDF ] | |
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