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PDF LMBT4403LT3G Data sheet ( Hoja de datos )
| Número de pieza | LMBT4403LT3G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
• We declare that the material of product compliance with RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LMBT4403LT1G
S-LMBT4403LT1G
SLM-LBMTB4T440430L3TL3TG3
Marking
Shipping
2T 3000/Tape & Reel
2T 10000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V CEO
V CBO
V EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR –5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Value
– 40
– 40
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
LMBT4403LT1G
S-LMBT4403LT1G
3
1
2
SOT– 23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT4403LT1G = 2T
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –0.1mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –0.1mAdc, I C = 0)
Base Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
Collector Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BEV
I CEX
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Min
– 40
– 40
– 5.0
—
—
Max Unit
—
—
—
– 0.1
– 0.1
Vdc
Vdc
Vdc
µAdc
µAdc
Rev.O 1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
STATIC CHARACTERISTICS
3.0
V CE= 1.0 V
2.0 V CE= 10 V
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
T J = 125°C
25°C
–55°C
2.0 3.0
5.0 7.0 10
20 30
I , COLLECTOR CURRENT (mA)
C
Figure 14. DC Current Gain
50 70 100
20 300 500
1.0
0.8
0.6
I C=1.0 mA
0.4
10 mA
100mA
500mA
0.2
0
0.005 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I , BASE CURRENT (mA)
B
Figure 15. Collector Saturation Region
5.0 7.0 10
20 30
50
10
T J = 25°C
0.8
0.6
0.4
V BE(sat) @ I C /I B =10
V BE @ V CE =1.0 V
0.2
0
0.1 0.2
V CE(sat) @ I C /I B =10
0.5 1.0 2.0 5.0 10 20
50 100 200
500
I C , COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
+ 0.5
0
– 0.5
θ VC for VCE(sat)
–1.0
–1.5
–2.0 θ VS for V BE
– 2.5
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
500
I C , COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
Rev.O 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LMBT4403LT3G.PDF ] | |
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