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PDF LMBT2907AWT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBT2907AWT1G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LMBT2907AWT1G
S-LMBT2907AWT1G
LMBT2907AWT3G
S-LMBT2907AWT3G
Mar king
20
20
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBT2907AWT1G
S-LMBT2907AWT1G
3
1
2
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
– 60
– 60
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
RθJA
TJ , Tstg
Max
150
833
–55 to +150
LMBT2907AWT1G =20
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
V (BR)CEO
(I C = – 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = – 10 µ Adc, I E = 0)
V (BR)CBO
Emitter–Base Breakdown Voltage
(I E = –10µAdc, I C = 0)
V (BR)EBO
Base Cutoff Current
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
I BL
Collector Cutoff Current
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
I CEX
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
–60
–60
–5.0
—
—
Unit
mW
°C/W
°C
Max
—
—
—
– 50
– 50
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Rev.B 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LMBT2907AWT1G.PDF ] | |
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