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PDF LMBT2222AWT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBT2222AWT1G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
These transistors are designed for general
purpose amplifier applications. They are
housed in the SOT–323/SC–70 package which
is designed for low power surface mount
applications.
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT2222AWT1G
S-LMBT2222AWT1G
3
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
CASE 419–02, STYLE 3
SOT–323 /SC – 70
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V
CBO
V EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board,
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
40 Vdc
75 Vdc
6.0 Vdc
600 mAdc
Symbol
PD
RθJA
TJ , Tstg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT2222AWT1G S-LMBT2222AWT1G = P1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(I C = 10 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Base Cutoff Current
(V CE = 60 Vdc, V EB = 3.0 Vdc)
Collector Cutoff Current
(V = 60 Vdc, V = 3.0 Vdc)
CE EB
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
I CEX
40
75
6.0
—
—
1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%.
Max Unit
— Vdc
— Vdc
— Vdc
20 nAdc
10 nAdc
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LMBT2222AWT1G.PDF ] | |
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