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PDF LMBT3904WT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBT3904WT1G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
●FEATURES
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●DEVICE MARKING AND RESISTOR VALUES
Device
Marking
Shipping
LMBT3904WT1G AM
3000/Tape&Reel
LMBT3904WT3G AM
10000/Tape&Reel
LMBT3904W T1G
S-LMBT3904W T1G
3
1
2
SOT– 323 / SC–70
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
40
60
6
200
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
3
COLLECTOR
2
EMITTER
●THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient(Note 1)
Junction and Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
PD 150 mW
RΘJA 833 ℃/W
TJ,Tstg −55∼+150
℃
June,2015
Rev.A 1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LMBT3904W T1G,S-LMBT3904W T1G
ELECTRICAL CHARACTERISTICS CURVES
2.5
IC/IB=10
2
1.5
1.4
IC/IB=10
1.2
1
0.8
1 0.6
0.4
0.5
0.2
0
0.001
0.01
0.1
IC, Collector Current(A)
1
0
0.0001
0.001
0.01
0.1
IC, Collector Current(A)
25℃
150℃
-55℃
25℃
150℃
-55℃
Figure 7. VCE(sat) vs IC
Figure 8. VBE(sat) vs IC
1
1.4
VCE=1V
1.2
1
0.8
0.6
0.4
0.2
0
0.0001
0.001
0.01
0.1
IC, Collector Current(A)
25℃
150℃
-55℃
Figure 9. VBE(on) vs. IC
1
June,2015
Rev.A 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LMBT3904WT1G.PDF ] | |
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