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PDF LMBT2222ATT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBT2222ATT1G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−89 package which
is designed for low power surface mount applications.
Features
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT2222ATT1G
S-LMBT2222ATT1G
SC-89
ORDERING INFORMATION
Device
Maring
LMBT2222ATT1G
S-LMBT2222ATT1G
1P
1P
Shippin†g
3000 / Tape & Reel
LMBT2222ATT3G
S-LMBT2222ATT3G
1P 10000 / Tape & Reel
1P
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
TJ, Tstg
Max Unit
40 Vdc
75 Vdc
6.0 Vdc
600 mAdc
Max Unit
150 mW
833 °C/W
−55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
1P M G
G
1
1P = Specific Device Code
M = Date Code
G = Pb−Free Package
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
75
6.0
−
−
Max Unit
− Vdc
− Vdc
− Vdc
20 nAdc
100 nAdc
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LMBT2222ATT1G.PDF ] | |
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