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PDF LMBT3906TT3G Data sheet ( Hoja de datos )
| Número de pieza | LMBT3906TT3G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽSimplifies Circuit Design.
ƽ We declare that the material of product compliance with
RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
LMBT3906TT1G
S-LMBT3906TT1G
LMBT3906TT3G
S-LMBT3906TT3G
2A
2A
2A
2A
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Shipping
3000/Tape & Reel
10000/Tape & Reel
Symbol
V CEO
V CBO
V EBO
IC
Value
– 40
– 40
– 5.0
– 200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 4 Board(1)
T A =25 °C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
FR-4 Board (2), T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
200 mW
1.6 mW/°C
600 °C/W
300 mW
2.4
400
–55 to +150
mW/°C
°C/W
°C
LMBT3906TT1G
S-LMBT3906TT1G
1
BASE
SC-89
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT3906TT1G = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
Collector Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
1. FR-4 Minimum Pad.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
I CEX
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Width <300 µs; Duty Cycle <2.0%.
Min
– 40
– 40
– 5.0
—
—
Max Unit
Vdc
—
Vdc
—
Vdc
—
nAdc
– 50
nAdc
– 50
Rev.O 1/6
1 page  
1000
TJ = 150°C
25°C
- 55°C
100
LESHAN RADIO COMPANY, LTD.
LMBT3906TT1G ;S-LMBT3906TT1G
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V
10
1.0
10 100
IC, COLLECTOR CURRENT (mA)
1000
Figure 13. DC Current Gain
1.0
0.8
I C=1.0 mA
0.6
10 mA
30 mA
T J = 25°C
100 mA
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07
0.1
0.2 0.3
0.5 0.7 1.0
I B , BASE CURRENT (mA)
Figure 14. Collector Saturation Region
2.0 3.0
5.0 7.0 10
1.2
T J = 25°C
1.0
0.8
V BE(sat) @ I C /I B =10
V BE @ V CE =1.0 V
0.6
0.4
V CE(sat) @ I C /I B =10
0.2
0
1.0
2.0
5.0
10 20
50 100 200
C , COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
1.0
0.5 θ VC for V CE(sat)
+25°C TO +125°C
0
–55°C TO +25°C
– 0.5
–1.0
–1.5
θ VB for V BE(sat)
+25°C TO +125°C
–55°C TO +25°C
–2.0
0
20 40 60 80 100 120 140 160 180
I C , COLLECTOR CURRENT (mA)
Figure 16. Temperature Coefficients
200
Rev.O 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LMBT3906TT3G.PDF ] | |
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