LMBT3906TT1G PDF даташит
Спецификация LMBT3906TT1G изготовлена «Leshan Radio Company» и имеет функцию, называемую «General Purpose Transistor». |
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Детали детали
Номер произв | LMBT3906TT1G |
Описание | General Purpose Transistor |
Производители | Leshan Radio Company |
логотип |
6 Pages
No Preview Available ! |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽSimplifies Circuit Design.
ƽ We declare that the material of product compliance with
RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
LMBT3906TT1G
S-LMBT3906TT1G
LMBT3906TT3G
S-LMBT3906TT3G
2A
2A
2A
2A
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Shipping
3000/Tape & Reel
10000/Tape & Reel
Symbol
V CEO
V CBO
V EBO
IC
Value
– 40
– 40
– 5.0
– 200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 4 Board(1)
T A =25 °C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
FR-4 Board (2), T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
200 mW
1.6 mW/°C
600 °C/W
300 mW
2.4
400
–55 to +150
mW/°C
°C/W
°C
LMBT3906TT1G
S-LMBT3906TT1G
1
BASE
SC-89
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT3906TT1G = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
Collector Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
1. FR-4 Minimum Pad.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
I CEX
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Width <300 µs; Duty Cycle <2.0%.
Min
– 40
– 40
– 5.0
—
—
Max Unit
Vdc
—
Vdc
—
Vdc
—
nAdc
– 50
nAdc
– 50
Rev.O 1/6
No Preview Available ! |
LESHAN RADIO COMPANY, LTD.
LMBT3906TT1G ;S-LMBT3906TT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS (3)
DC Current Gain
(I C = –0.1 mAdc, V CE = –1.0 Vdc)
(I C = –1.0 mAdc, V CE = –1.0 Vdc)
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –50 mAdc, V CE = –1.0 Vdc)
(I C = –100 mAdc, V CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
Base–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
hFE
VCE(sat)
V BE(sat)
60
80
100
60
30
––
––
– 0.65
––
Max
––
––
300
––
––
– 0.25
– 0.4
– 0.85
– 0.95
Unit
––
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz)
Output Capacitance
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz)
fT
C obo
C ibo
h ie
h re
h fe
* h oe
NF
MHz
250 ––
pF
–– 4.5
pF
–– 10
kΩ
2.0 12
X 10 –4
0.1 10
—
100 400
µmhos
3.0 60
dB
–– 4.0
SWITCHING CHARACTERISTICS
Delay Time
(V CC = – 3.0 Vdc, V BE = 0.5 Vdc,
Rise Time
Storage Time
Fall Time
I C = –10 mAdc, I B1 = –1.0 mAdc)
(V CC = –3.0 Vdc, I C = –10 mAdc,
I B1 = I B2 = –1.0 mAdc)
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
td
td
ts
tf
— 35
— 35 ns
— 225 ns
— 75
Rev.O 2/6
No Preview Available ! |
LESHAN RADIO COMPANY, LTD.
LMBT3906TT1G ;S-LMBT3906TT1G
+ 0.5 V
0
<1 ns
10 k
– 10.6 V
300ns
DUTY CYCLE = 2%
3V
275
+ 9.1 V
0
C < 4.0 pF*
S
10 < t 1 < 500 µs
DUTY CYCLE = 2%
t1
<1ns
10 k
1N916
10.9 V
3V
275
C S < 4.0 pF*
*Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10.0
7.0
5.0
3.0
2.0
C obo
C ibo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
Figure 3. Capacitance
20 30 40
500
300 I C /I B = 10
200
100
70
50
30
20
10
7
5
1.0
t r @V CC=3.0V
15 V
2.0 3.0
t d@V OB=0V
40 V
2.0 V
5.0 7.0 10
20 30 50 70 100 200
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
5000
3000
2000
V CC = 40 V
I C / I B = 10
1000
700
500
T J = 25°C
T J = 125°C
300
200
100
70
50
1.0
500
300
200
100
70
50
30
20
10
7
5
1.0
QT
QA
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 4. Charge Data
200
I C /I B = 20
V CC = 40 V
I B1 = I B2
I C /I B = 10
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 6. Fall Time
200
Rev.O 3/6
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Номер в каталоге | Описание | Производители |
LMBT3906TT1 | Transistors | Leshan Radio Company |
LMBT3906TT1G | General Purpose Transistor | Leshan Radio Company |
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