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CEM6659 PDF даташит

Спецификация CEM6659 изготовлена ​​​​«CET» и имеет функцию, называемую «Dual Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEM6659
Описание Dual Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEM6659 Даташит, Описание, Даташиты
CEM6659
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
60V, 4.1A, RDS(ON) = 68m@VGS = 10V.
RDS(ON) = 86m@VGS = 4.5V.
-60V, -3.1A, RDS(ON) = 130m@VGS = -10V.
RDS(ON) = 170m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 60
VGS ±20
ID 4.1
IDM 15
P-Channel
-60
±20
-3.1
-12
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.May
http://www.cet-mos.com









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CEM6659 Даташит, Описание, Даташиты
CEM6659
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 4.1A
VGS = 4.5V, ID = 3.5A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 4.1A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 4.1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
60
1
Typ Max Units
1
100
-100
V
µA
µA
µA
3V
56 68 m
66 86 m
5S
670 pF
80 pF
45 pF
11 25 ns
3 10 ns
30 60 ns
3 10 ns
13 17 nC
1.7 nC
2.6 nC
4.1 A
1.2 V
2









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CEM6659 Даташит, Описание, Даташиты
CEM6659
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = -250µA
VGS = -10V, ID = -3.1A
VGS = -4.5V, ID = -2.8A
VDS = -10V, ID = -3.1A
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -3.1A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-60
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
100 130 m
130 170 m
5S
885 pF
85 pF
80 pF
12 25 ns
4 15 ns
38 80 ns
12 25 ns
11 14 nC
2.4 nC
1.6 nC
-3.1 A
-1.2 V
6
3










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