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Número de pieza | CEH2608 | |
Descripción | Dual Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEH2608 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEH2608
Dual Enhancement Mode Field Effect Transistor (N Channel)
PRELIMINARY
FEATURES
20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V.
RDS(ON) = 70mΩ @VGS = 2.5V.
RDS(ON) = 100mΩ @VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
4
5
6
3
2
1
TSOP-6
G1(1)
D1(6)
G2(3)
S1(5)
D2(4)
S2(2)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 20
VGS ±12
ID 3.8
IDM 15.2
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.May
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEH2608.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEH2608 | Dual Enhancement Mode Field Effect Transistor | CET |
CEH2609 | Dual Enhancement Mode Field Effect Transistor | CET |
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