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даташит CEU30P10 PDF ( Datasheet )

CEU30P10 Datasheet Download - CET

Номер произв CEU30P10
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEU30P10 Даташит, Описание, Даташиты
CED30P10/CEU30P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -30A, RDS(ON) = 76m@VGS = -10V.
RDS(ON) = 92m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-100
±20
-30
-120
150
1.2
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2009.Nov
http://www.cet-mos.com
1







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CEU30P10 Даташит, Описание, Даташиты
CED30P10/CEU30P10
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -15A
VGS = -4.5V, ID = -8A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -50V, ID = -18A,
VGS = -10V, RGEN= 3.3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -80V, ID = -18A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -16A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-100
-1
Typ
63
72
2550
345
70
16
7
120
25
78
8
20
Max
-25
100
-100
-3
76
92
32
14
240
50
101
-30
-1.2
Units
V
µA
nA
nA
V
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
5
2







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CEU30P10 Даташит, Описание, Даташиты
CED30P10/CEU30P10
25
-VGS=10,8,7,6,5V
20
75
25 C
60
15
-VGS=4V
10
5 -VGS=3V
0
0.0 0.5 1.0 1.5 2.0 2.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
45
30
TJ=125 C
15
-55 C
0
0123456
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3000
2500
Ciss
2000
1500
1000
500 Coss
Crss
0
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 ID=-16A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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