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даташит CED6355 PDF ( Datasheet )

CED6355 Datasheet Download - CET

Номер произв CED6355
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CED6355 Даташит, Описание, Даташиты
CED6355/CEU6355
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -26A, RDS(ON) = 42m@VGS = -10V.
RDS(ON) = 65m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-60
±20
-26
-104
50
0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.5
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.Aug
http://www.cetsemi.com







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CED6355 Даташит, Описание, Даташиты
CED6355/CEU6355
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = -250µA
VGS = -10V, ID = -26A
VGS = -4.5V, ID = -21A
VDS = -10V, ID = -26A
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID = -20A,
VGS = -10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -20A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -26A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-60
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
35 42 m
50 65 m
22
2020
180
95
S
pF
pF
pF
15 30
48
47 94
11 22
32.2 42.8
5.7
5.4
ns
ns
ns
ns
nC
nC
nC
-26 A
-1.3 V
6
2







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CED6355 Даташит, Описание, Даташиты
CED6355/CEU6355
25
-VGS=10,8,6,4V
20
35
28
15 21
10
-VGS=3V
5
0
0 1 23 4 56
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
14
25 C
7
TJ=125 C
0
01 2 3
-55 C
45
6
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3000
2500
2000
Ciss
1500
1000
500 Coss
0 Crss
05
10 15
20 25 30
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2
ID=-26A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
103 VGS=0V
102
101
100
0.3 0.6 0.9 1.2 1.5 1.8
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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