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CEM4201 Datasheet Download - CET

Номер произв CEM4201
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEM4201 Даташит, Описание, Даташиты
CEM4201
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -7.5A, RDS(ON) = 28m@VGS = -10V.
RDS(ON) = 38m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -40
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -7.5
IDM -30
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.July
http://www.cet-mos.com







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CEM4201 Даташит, Описание, Даташиты
CEM4201
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = -250µA
VGS = -10V, ID = -7A
VGS = -4.5V, ID = -4A
VDS = -5V, ID = -4.8A
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -20V, ID = -4.1A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-40
-1
Typ
22
30
12
1760
220
155
16
6
61
15
18
5
7
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
28 m
38 m
S
pF
pF
pF
32 ns
12 ns
122 ns
30 ns
23 nC
nC
nC
-2 A
-1.2 V
2







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CEM4201 Даташит, Описание, Даташиты
10
-VGS=10,6,5,4V
8
6 -VGS=3.0V
4
2
0
0 0.5
1 1.5
2 2.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2400
2000
Ciss
1600
1200
800
400 Coss
0 Crss
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEM4201
10
8
6
4
25 C
2
TJ=125 C
0
012
-55 C
34
5
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-7A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current










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