APM1110K PDF даташит
Спецификация APM1110K изготовлена «Sinopower» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
Номер произв | APM1110K |
Описание | N-Channel Enhancement Mode MOSFET |
Производители | Sinopower |
логотип |
11 Pages
No Preview Available ! |
APM1110K
Features
· 100V/2.7A,
RDS(ON)=140mW (typ.) @ VGS=10V
RDS(ON)=185mW (typ.) @ VGS=4.5V
· ESD Protected
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in TV Inverter.
®
N-Channel Enhancement Mode MOSFET
Pin Configuration
DD DD
S
S
S
G
Top View of SOP-8
(8, 7, 6, 5)
DDDD
(4) G
Ordering and Marking Information
SSS
(1, 2, 3)
N-Channel MOSFET
APM1110
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G: Halogen and Lead Free Device
APM1110 K:
APM1110
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2014
1
www.sinopowersemi.com
No Preview Available ! |
APM1110K
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
100
V
±20
IDa Continuous Drain Current (VGS=10V)
TA=25°C
TA=70°C
ID
a
M
300ms Pulsed Drain Current (VGS=10V)
I
a
S
Diode Continuous Forward Current
EASb Avalanche Energy, Single Pulsed (L=0.3mH)
2.7
2.1
A
10
2
25 mJ
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
PDa Maximum Power Dissipation
TA=25°C
TA=70°C
2.5
W
1.6
RqJ
a,c
A
Thermal Resistance-Junction to Ambient
50 °C/W
Note a:Surface Mounted on 1in2 pad area, t £ 10sec.
Note b:USI tested and pulse width limited by maximum jun ction temperature 150°C (initial temperature Tj=25°C).
Note c:maximum under Steady State conditions is 75 °C/w.
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
VGS=0V, IDS=250mA
VDS=80V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±16V, VDS=0V
VGS=10V, IDS=2.7A
VGS=4.5V, IDS=2A
ISD=2A, VGS=0V
ISD=2.7A, dlSD/dt=100A/ms
APM1110K
Min. Typ. Max.
100 -
-
- -1
- - 30
123
- - 10
- 140 180
- 185 240
- 0.8 1.1
- 43 -
- 73 -
Unit
V
mA
V
mA
mW
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2014
2
www.sinopowersemi.com
No Preview Available ! |
APM1110K
®
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics e
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=50V, VGS=10V,
IDS=2.7A
Note d : Pulse test ; pulse width£300ms, duty cycle£2%.
Note e : Guaranteed by design, not subject to production testing.
APM1110K
Unit
Min. Typ. Max.
- 440 -
- 36 - pF
- 20 -
- 11 21
- 10 19 ns
- 24 44
- 21 39
- 9.5 13
- 1.9 -
nC
- 2.1 -
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2014
3
www.sinopowersemi.com
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