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CS2N65A8 PDF даташит

Спецификация CS2N65A8 изготовлена ​​​​«HUAJING» и имеет функцию, называемую «Silicon N-Channel Power MOSFET».

Детали детали

Номер произв CS2N65A8
Описание Silicon N-Channel Power MOSFET
Производители HUAJING
логотип HUAJING логотип 

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CS2N65A8 Даташит, Описание, Даташиты
Huajing Discrete Devices
Silicon N-Channel Power MOSFET
General Description
CS2N65 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features
l Fast Switching
l Low ON Resistance(Rdson5)
l Low Gate Charge (Typical Data:9nC)
l Low Reverse transfer capacitances(Typical:6pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
VDSS
ID
PD (TC=25)
RDS(ON)Typ
R
CS2N65 A8
650 V
2A
35 W
3.9
Symbol
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
Rating
650
2.0
1.45
8
±30
68
6.4
1.1
5
35
0.28
15055 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012









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CS2N65A8 Даташит, Описание, Даташиты
Huajing Discrete Devices
R CS2N65 A8
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS= 30V
VGS =-30V
ON Characteristics
Symbol
Parameter
Test Conditions
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
VGS=10V,ID=1.0A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
650 -- --
-- 0.6 --
-- -- 1
100
-- -- 100
-- -- -100
Units
V
V/
µA
nA
nA
Rating
Min. Typ. Max.
-- 3.9 4.5
2.0 4.0
Units
V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =2A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =2.0A VDD = 325V
VGS = 10V RG = 9.1
ID =2.0A VDD =325V
VGS = 10V
Rating
Min. Typ. Max.
2.6 --
-- 290
-- 31
-- 6
Units
S
pF
Rating
Min. Typ. Max.
-- 8 --
-- 6 --
-- 30 --
-- 11 --
-- 9
-- 1.5
-- 4
Units
ns
nC
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2012









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CS2N65A8 Даташит, Описание, Даташиты
Huajing Discrete Devices
R CS2N65 A8
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp380µs,δ≤2%
Test Conditions
IS=2.0A,VGS=0V
IS=2.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
Rating
Typ. Max.
-- 2
-- 8
-- 1.5
425 --
1140 --
Units
A
A
V
ns
nC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
3.57 /W
62 /W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10.0mH, ID=3.7A, Start TJ=25
a3ISD =2A,di/dt 100A/us,VDDBVDS, Start TJ=25
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2012










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Номер в каталогеОписаниеПроизводители
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