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BTA316B-600BT PDF даташит

Спецификация BTA316B-600BT изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «3Q Hi-Com Triac».

Детали детали

Номер произв BTA316B-600BT
Описание 3Q Hi-Com Triac
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BTA316B-600BT Даташит, Описание, Даташиты
BTA316B-600BT
3Q Hi-Com Triac
6 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface
mountable plastic package intended for use in circuits where high static and dynamic dV/
dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at
the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It
is used in applications where "high junction operating temperature capability" is required.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
Applications subject to high temperature
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
VDRM
ITSM
Tj
IT(RMS)
Quick reference data
Parameter
Conditions
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
junction temperature
RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
Min Typ Max Unit
- - 600 V
- - 140 A
- - 150 °C
- - 16 A
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BTA316B-600BT Даташит, Описание, Даташиты
NXP Semiconductors
BTA316B-600BT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
2-
2-
2-
50 mA
50 mA
50 mA
1000 - - V/µs
20 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
mb
2
13
D2PAK (SOT404)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA316B-600BT
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BTA316B-600BT
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 14









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BTA316B-600BT Даташит, Описание, Даташиты
NXP Semiconductors
BTA316B-600BT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 600 V
- 16 A
- 140 A
- 150 A
- 98 A2s
- 100 A/µs
- 2A
- 5W
- 0.5 W
-40 150 °C
- 150 °C
20
IT(RMS)
(A)
16
12
8
4
003aaj662
120 °C
60
IT(RMS)
(A)
50
40
30
20
10
003aaj663
Fig. 1.
0
-50 0 50 100 150
Tmb (°C)
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
0
10-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tmb = 120 °C
RMS on-state current as a function of surge
duration; maximum values
BTA316B-600BT
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 14










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Номер в каталогеОписаниеПроизводители
BTA316B-600BT3Q Hi-Com TriacNXP Semiconductors
NXP Semiconductors

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