BTA316B-600BT PDF даташит
Спецификация BTA316B-600BT изготовлена «NXP Semiconductors» и имеет функцию, называемую «3Q Hi-Com Triac». |
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Детали детали
Номер произв | BTA316B-600BT |
Описание | 3Q Hi-Com Triac |
Производители | NXP Semiconductors |
логотип |
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BTA316B-600BT
3Q Hi-Com Triac
6 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface
mountable plastic package intended for use in circuits where high static and dynamic dV/
dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at
the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It
is used in applications where "high junction operating temperature capability" is required.
2. Features and benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High immunity to false turn-on by dV/dt
• High junction operating temperature capability
• High voltage capability
• Less sensitive gate for very high noise immunity
• Planar passivated for voltage ruggedness and reliability
• Surface mountable package
• Triggering in three quadrants only
3. Applications
• Applications subject to high temperature
• Electronic thermostats (heating and cooling)
• High power motor controls e.g. washing machines and vacuum cleaners
• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
VDRM
ITSM
Tj
IT(RMS)
Quick reference data
Parameter
Conditions
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
junction temperature
RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
Min Typ Max Unit
- - 600 V
- - 140 A
- - 150 °C
- - 16 A
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NXP Semiconductors
BTA316B-600BT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
2-
2-
2-
50 mA
50 mA
50 mA
1000 - - V/µs
20 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
mb
2
13
D2PAK (SOT404)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA316B-600BT
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BTA316B-600BT
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 14
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NXP Semiconductors
BTA316B-600BT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 600 V
- 16 A
- 140 A
- 150 A
- 98 A2s
- 100 A/µs
- 2A
- 5W
- 0.5 W
-40 150 °C
- 150 °C
20
IT(RMS)
(A)
16
12
8
4
003aaj662
120 °C
60
IT(RMS)
(A)
50
40
30
20
10
003aaj663
Fig. 1.
0
-50 0 50 100 150
Tmb (°C)
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
0
10-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tmb = 120 °C
RMS on-state current as a function of surge
duration; maximum values
BTA316B-600BT
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 14
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BTA316B-600BT | 3Q Hi-Com Triac | NXP Semiconductors |
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