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FDS8958A_F085 PDF даташит

Спецификация FDS8958A_F085 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «Dual N & P-Channel PowerTrench MOSFET».

Детали детали

Номер произв FDS8958A_F085
Описание Dual N & P-Channel PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDS8958A_F085 Даташит, Описание, Даташиты
February 2010
FDS8958A_F085
Dual N & P-Channel PowerTrench® MOSFET
tm
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1: N-Channel
7.0A, 30V
RDS(on) = 0.028@ VGS = 10V
RDS(on) = 0.040@ VGS = 4.5V
Q2: P-Channel
-5A, -30V
RDS(on) = 0.052@ VGS = -10V
RDS(on) = 0.080@ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
Qualified to AEC Q101
RoHS Compliant
DD1DD2DD2
DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
EAS
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1c)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8958A
FDS8958A_F085
13”
©2010 Fairchild Semiconductor Corporation
FDS8958A_F085 Rev. A
1
5 Q2
6
Q1
7
8
4
3
2
1
Q1 Q2
30 30
±20 ±20
7 -5
20 -20
22
1.6 1.6
0.9 0.9
54 13
-55 to +150
Units
V
V
A
W
mJ
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
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FDS8958A_F085 Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
IGSSF
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
VDS = -24 V,
VGS = 0 V
VGS = 20 V,
VDS = 0 V
VGS = -20 V,
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS,
VDS = VGS,
ID = 250 µA
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V,
ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V,
ID = 6 A
VGS = -10 V,
ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V,
ID = -4 A
VGS = 10 V,
VDS = 5 V
VGS = -10 V,
VDS = -5 V
VDS = 5 V,
ID = 7 A
VDS = -5 V,
ID =-5 A
Dynamic Characteristics
Ciss Input Capacitance
Q1
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Coss Output Capacitance
Q2
Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Type Min Typ Max Units
Q1 30
Q2 -30
V
Q1 25 mV/°C
Q2 -23
Q1 1 µA
Q2 -1
All 100 nA
All -100 nA
Q1 1 1.9 3
Q2 -1 -1.7 -3
V
Q1 -4.5 mV/°C
Q2 4.5
Q1 19 28 m
27 42
24 40
Q2 42 52
57 78
65 80
Q1 20
Q2 -20
Q1 25
Q2 10
A
S
Q1 575
Q2 528
Q1 145
Q2 132
Q1 65
Q2 70
Q1 2.1
Q2 6.0
pF
pF
pF
FDS8958A_F085 Rev. A
2
www.fairchildsemi.com









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FDS8958A_F085 Даташит, Описание, Даташиты
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
Q1
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Q2
VDD = -15 V, ID = -1 A,
VGS = -10V, RGEN = 6
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q1
VDS = 15 V, ID = 7 A, VGS = 10 V
Q2
VDS = -15 V, ID = -5 A,VGS = -10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
ISM Maximum Plused Drain-Source Diode Forward Current (Note 2) Q1
Q2
VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
(Note 2)
Q1
Voltage
VGS = 0 V, IS = -1.3 A
(Note 2)
Q2
trr Diode Reverse Recovery Q1
Time
IF = 7 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Q2
Charge
IF = -5 A, diF/dt = 100 A/µs
Q1
Q2
Q1
Q2
8 16
7 14
5 10
13 24
23 37
14 25
36
9 17
11.4 16
9.6 13
1.7
2.2
2.1
1.7
ns
ns
ns
ns
nC
nC
nC
0.75
-0.88
19
19
9
6
1.3
-1.3
20
-20
1.2
-1.2
A
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1).
Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2).
c) 135°/W when mounted on a
minimum pad.
FDS8958A_F085 Rev. A
3
www.fairchildsemi.com










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Номер в каталогеОписаниеПроизводители
FDS8958A_F085Dual N & P-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

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