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PDF MMBTA14LT1G Data sheet ( Hoja de datos )
| Número de pieza | MMBTA14LT1G | |
| Descripción | Darlington Amplifier Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMBTA13L, SMMBTA13L,
MMBTA14L, SMMBTA14L
Darlington Amplifier
Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCES
VCBO
VEBO
IC
30 Vdc
30 Vdc
10 Vdc
300 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 5
1
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR 3
BASE
1
EMITTER 2
MARKING DIAGRAM
1x M G
G
1
1x = Device Code
x = M for MMBTA13LT1G,
SMMBTA13LT1G
x = N for MMBTA14LT1G,
SMMBTA14LT1G, T3G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBTA13LT1G, SOT−23 3,000 / Tape & Reel
SMMBTA13LT1G (Pb−Free)
MMBTA14LT1G, SOT−23 3,000 / Tape & Reel
SMMBTA14LT1G (Pb−Free)
SMMBTA14LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBTA13LT1/D
1 page  
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
SINGLE PULSE
SINGLE PULSE
ZqJC(t) = r(t) • RqJC TJ(pk) - TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJA TJ(pk) - TA = P(pk) ZqJA(t)
1.0 2.0
5.0 10
20 50 100 200
t, TIME (ms)
Figure 12. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
1.0 k
700
500
300 TA = 25°C
200
1.0 ms
TC = 25°C 100 ms
1.0 s
100
70
50
30 CURRENT LIMIT
20 THERMAL LIMIT
10
0.4 0.6
SECOND BREAKDOWN LIMIT
1.0 2.0
4.0 6.0 10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 13. Active Region Safe Operating Area
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE
+
t1 f
+
t1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBTA14LT1G.PDF ] | |
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