NSVBC856BM3T5G PDF даташит
Спецификация NSVBC856BM3T5G изготовлена «ON Semiconductor» и имеет функцию, называемую «General Purpose Transistor». |
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Детали детали
Номер произв | NSVBC856BM3T5G |
Описание | General Purpose Transistor |
Производители | ON Semiconductor |
логотип |
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BC856BM3, NSVBC856BM3
General Purpose Transistor
PNP Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−723 which is designed for low
power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−65
−80
−5.0
−100
V
V
V
mA
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
265 mW
2.1 mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RqJA
470 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2)
PD
RqJA
640 mW
5.1 mW/°C
195 °C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
1
BASE
COLLECTOR
3
2
EMITTER
MARKING
DIAGRAM
3
SOT−723
1
2
CASE 631AA
STYLE 1
3B M
3B = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BC856BM3T5G
SOT−723 8000 / Tape &
(Pb−Free)
Reel
NSVBC856BM3T5G SOT−723 8000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 2
1
Publication Order Number:
BC856BM3/D
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BC856BM3, NSVBC856BM3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
Collector −Base Breakdown Voltage
(IC = −10 mA)
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
Collector Cutoff Current (VCB = −30 V)
(VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA)
Collector −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA)
Base −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA)
Base −Emitter Voltage (IC = −2.0 mA, VCE = −5.0 V)
Base −Emitter Voltage (IC = −10 mA, VCE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Symbol
Min
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
−65
−80
−80
−5.0
−
−
hFE
VCE(sat)
VBE(sat)
VBE(on)
−
220
−
−
−
−
−0.6
−
fT
Cobo
NF
100
−
−
Typ Max Unit
V
−−
V
−−
V
−−
V
−−
− −15 nA
− −4.0 mA
150 −
290 475
− −0.3
− −0.65
−0.7 −
−0.9 −
− −0.75
− −0.82
−
V
V
mV
MHz
−−
pF
− 4.5
dB
− 10
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BC856BM3, NSVBC856BM3
TYPICAL CHARACTERISTICS
VCE = -5.0 V
TA = 25°C
2.0
1.0
0.5
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-1.0
TJ = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
-2.0
-1.6
IC =
-1.2 -10 mA
-20 mA
-50 mA -100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02 -0.05 -0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
-1.0
-1.4
-1.8
qVB for VBE
-2.2
-55°C to 125°C
-2.6
-3.0
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
40
TJ = 25°C
20 Cib
10
8.0
6.0 Cob
4.0
2.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
-50 -100
500 VCE = -5.0 V
200
100
50
20
-1.0 -10 -100
IC, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain − Bandwidth Product
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Номер в каталоге | Описание | Производители |
NSVBC856BM3T5G | General Purpose Transistor | ON Semiconductor |
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