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APM2522NU PDF даташит

Спецификация APM2522NU изготовлена ​​​​«Anpec Electronics Coropration» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв APM2522NU
Описание N-Channel Enhancement Mode MOSFET
Производители Anpec Electronics Coropration
логотип Anpec Electronics Coropration логотип 

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APM2522NU Даташит, Описание, Даташиты
APM2522NU
N-Channel Enhancement Mode MOSFET
Features
25V/30A,
RDS(ON)=14.5m(Typ.) @ VGS=10V
RDS(ON)=21.5m(Typ.) @ VGS=4.5V
Super High Dense Cell Design
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
G
S
D
Top View of TO-252
D
Applications
Power Management in Desktop Computer or
DC/DC Converters
G
S
N-Channel MOSFET
Ordering and Marking Information
APM2522N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2522N U : APM2522N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
1
www.anpec.com.tw









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APM2522NU Даташит, Описание, Даташиты
APM2522NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA = 25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300µs Pulse Drain Current Tested
Mounted On Large Heat Sink
TC=25°C
TC=25°C
TC=100°C
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Mounted On PCB Of 1in2 Pad Area
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Mounted On PCB Of Minimum Footprint
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Note : * Current limited by bond wire.
Rating
25
±20
150
-55 to 150
20
100
70
30*
20
50
20
2.5
9
6
2.5
1
50
7
4
1.5
0.5
75
Unit
V
°C
°C
A
A
A
W
°C/W
A
W
°C/W
A
°C/W
°C/W
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
2
www.anpec.com.tw









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APM2522NU Даташит, Описание, Даташиты
APM2522NU
Electrical Characteristics
(T
A
=
25°C)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics b
VGS=0V, IDS=250µA
VDS=20V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=20A
VGS=4.5V, IDS=10A
ISD=10A, VGS=0V
ISD=8A, dISD/dt =100A/µs
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-On Delay Time
tr Turn-On Rise Time
td(OFF) Turn-Off Delay Time
tf Turn-Off Fall Time
Gate Charge Characteristics b
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=20A
Note a : Pulse test ; pulse width 300µs, duty cycle 2%.
Note b : Guaranteed by design, not subject to production testing.
APM2522NU
Min. Typ. Max.
25 -
-
- -1
- - 30
1 1.5 2.5
- - ±100
- 14.5 20
- 21.5 28
- 0.7 1.1
- 20 -
- 10 -
-2-
- 825 -
- 125 -
- 85 -
- 8 15
- 13 24
- 29 53
- 8 15
- 17 24
-2-
-5-
Unit
V
µA
V
nA
m
V
ns
nC
pF
ns
nC
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
3
www.anpec.com.tw










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Номер в каталогеОписаниеПроизводители
APM2522NUN-Channel Enhancement Mode MOSFETAnpec Electronics Coropration
Anpec Electronics Coropration

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