DataSheet26.com

C5505 PDF даташит

Спецификация C5505 изготовлена ​​​​«Panasonic» и имеет функцию, называемую «NPN Transistor - 2SC5505».

Детали детали

Номер произв C5505
Описание NPN Transistor - 2SC5505
Производители Panasonic
логотип Panasonic логотип 

3 Pages
scroll

No Preview Available !

C5505 Даташит, Описание, Даташиты
Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
Features
High-speed switching
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
60
5
8
16
20
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 60 V, IE = 0
VCE = 60 V, IB = 0
VCE = 2 V, IC = 1 A
VCE = 2 V, IC = 5 A
IC = 5 A, IB = 0.25 A
IC = 5 A, IB = 0.25 A
IC = 4 A
IB1 = 400 mA, IB2 = −400 mA
VCC = 50 V
60
100
100
80 280
50
1.2
1.7
0.2 0.5
0.5 1.0
0.10 0.15
V
µA
µA
V
V
µs
µs
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00287AED
1
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

C5505 Даташит, Описание, Даташиты
2SC5505
Area of safe operation
Non repetitive pulse
TC = 25°C
10
1 t=1s
t = 10 ms
t = 1 ms
t = 0.1 ms
0.1
10 100
Collector-emitter voltage VCE (V)
100 Ta = 25°C
10
1
0.1
0.01
0.001
0.01
Rth t
(1)
(2)
(1) Without heat sink
(2) With a 10 × 10 × 2 mm Al heat sink
0.1 1 10 100 1 000
Time t (s)
2 SJD00287AED
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

C5505 Даташит, Описание, Даташиты
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
Free Datasheet http://www.datasheet4u.com/










Скачать PDF:

[ C5505.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C5502NPN Transistor - 2SC5502Sanyo
Sanyo
C5505NPN Transistor - 2SC5505Panasonic
Panasonic
C5508NPN Transistor - 2SC5508NEC
NEC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск