A3R1GE40JBF PDF даташит
Спецификация A3R1GE40JBF изготовлена «Zentel» и имеет функцию, называемую «1Gb DDRII Synchronous DRAM». |
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Детали детали
Номер произв | A3R1GE40JBF |
Описание | 1Gb DDRII Synchronous DRAM |
Производители | Zentel |
логотип |
30 Pages
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A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
1Gb DDRII SDRAM Specification
A3R1GE30JBF
A3R1GE40JBF
Zentel Electronics Corp.
Revision 1.0
Dec., 2014
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A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
Specifications
Features
• Density: 1G bits
• Organization
− 16M words × 8 bits × 8 banks (A3R1GE30JBF)
− 8M words × 16 bits × 8 banks (A3R1GE40JBF)
• Package
− 60-ball FBGA(μBGA) (A3R1GE30JBF)
− 84-ball FBGA(μBGA) (A3R1GE40JBF)
− Lead-free (RoHS compliant)
• Power supply: VDD, VDDQ = 1.8V ± 0.1V
• Data rate: 1066Mbps/800Mbps (max.)
• 1KB page size (A3R1GE30JBF)
− Row address: A0 to A13
− Column address: A0 to A9
• 2KB page size (A3R1GE40JBF)
− Row address: A0 to A12
− Column address: A0 to A9
• Eight internal banks for concurrent operation
• Interface: SSTL_18
• Burst lengths (BL): 4, 8
• Burst type (BT):
− Sequential (4, 8)
− Interleave (4, 8)
• /CAS Latency (CL): 3, 4, 5, 6, 7
• Recharge: auto recharge option for each burst access
• Driver strength: normal/weak
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 8192 cycles/64ms
− Average refresh period
7.8μs at TC≦ +85°C
3.9μs at TC> +85°C
• Industrial grade compliant with AEC-Q100 grade3
• Automotive grade compliant with AEC-Q100 grade2
• Operating case temperature range
− TC = 0°C to +95°C (Commercial grade)*
− TC = -40°C to +95°C (Industrial grade)*
− TC = -40°C to +105°C (Automotive grade)*
• Double-data-rate architecture; two data transfers per clock
cycle
• The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS) is
transmitted/received with data for capturing data at the
receiver
• DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data and
data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• On-Die-Termination for better signal quality
• Programmable RDQS, /RDQS output for making × 8
organization compatible to × 4 organization
• /DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation
• Off-Chip Driver (OCD) impedance adjustment is not
supported
Note: Refer to operating temperature condition on page 5 for
details
Zentel Electronics Corporation reserve the right to change products or specification without notice.
Revision 1.0
Page 1 / 72
Dec., 2014
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A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
Ordering Information
Part number
A3R1GE30JBF-AH
A3R1GE30JBF-AHI
A3R1GE30JBF-AHA
A3R1GE30JBF-8E
A3R1GE30JBF-8EI
A3R1GE30JBF-8EA
A3R1GE40JBF-AH
A3R1GE40JBF-AHI
A3R1GE40JBF-AHA
A3R1GE40JBF-8E
A3R1GE40JBF-8EI
A3R1GE40JBF-8EA
Organization
(words × bits)
128M × 8
64M × 16
Internal
Banks
8
8
Speed bin
(CL-tRCD-tRP)
DDR2-1066 (7-7-7)
DDR2-1066 (7-7-7)
DDR2-1066 (7-7-7)
DDR2- 800 (5-5-5)
DDR2- 800 (5-5-5)
DDR2- 800 (5-5-5)
DDR2-1066 (7-7-7)
DDR2-1066 (7-7-7)
DDR2-1066 (7-7-7)
DDR2- 800 (5-5-5)
DDR2- 800 (5-5-5)
DDR2- 800 (5-5-5)
Package
60-ball FBGA
84-ball FBGA
Grade
Commercial
Industrial
Automotive
Commercial
Industrial
Automotive
Commercial
Industrial
Automotive
Commercial
Industrial
Automotive
Part Number
A 3 R 1G E 4 0J BF - 8E I
Operating
Temperature
Speed
Package Type
Blank: Commercial (0 ~ 95℃)
I: Industrial (-40 ~ 95℃)
A: Automotive (-40 ~ 105℃)
8E: DDR2-800
AH: DDR2-1066
BF: FBGA
Die version
IO Configuration
Classification
0J: Version 0J
3: x8
4: x16
E: DDR2
Density
1G: 1Gbits
Interface
R: SSTL-18
Product line
3: DRAM
Zentel memory
Revision 1.0
Page 2 / 72
Dec., 2014
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Номер в каталоге | Описание | Производители |
A3R1GE40JBF | 1Gb DDRII Synchronous DRAM | Zentel |
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