NRVTS12120EMFS PDF даташит
Спецификация NRVTS12120EMFS изготовлена «ON Semiconductor» и имеет функцию, называемую «Very Low Leakage Trench-based Schottky Rectifier». |
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Детали детали
Номер произв | NRVTS12120EMFS |
Описание | Very Low Leakage Trench-based Schottky Rectifier |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTS12120EMFS,
NRVTS12120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• LED Lighting
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
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TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
120 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
A
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
Not Used
TE1212
AYWWZZ
TE1212
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
C
C
ORDERING INFORMATION
Device
NTS12120EMFST1G
Package Shipping†
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NTS12120EMFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NRVTS12120EMFST1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVTS12120EMFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1
Publication Order Number:
NTS12120EMFS/D
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NTS12120EMFS, NRVTS12120EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 165°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 163°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
120
12
24
200
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg −65 to +175 °C
TJ
−55 to +175
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
RθJC
Typ
2.0
Max Unit
− °C/W
ELECTRICAL CHARACTERISTICS
Rating
Instantaneous Forward Voltage (Note 1)
(IF = 6 A, TJ = 25°C)
(IF = 12 A, TJ = 25°C)
(IF = 6 A, TJ = 125°C)
(IF = 12 A, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
VF
IR
Typ
0.6
0.735
0.515
0.588
1.73
3.75
2.4
3.87
Max
−
0.83
−
0.69
−
55
−
30
Unit
V
mA
mA
mA
mA
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NTS12120EMFS, NRVTS12120EMFS
TYPICAL CHARACTERISTICS
100 100
10 TA = 125°C
TA = 150°C
10 TA = 125°C
TA = 150°C
1
TA = 175°C
TA = 25°C
0.1
0
TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.9
1
TA = 175°C
TA = 25°C
0.1
0
TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
TA = 175°C
TA = 150°C
TA = 125°C
1.E+00
1.E−01
1.E−02
1.E−03
TA = 175°C
TA = 150°C
TA = 125°C
1.E−04
1.E−05
1.E−06
TA = 25°C
1.E−04
1.E−05
1.E−06
TA = 25°C
1.E−07
1.E−07
0 10 20 30 40 50 60 70 80 90 100 110 120
0 10 20 30 40 50 60 70 80 90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10,000
1000
TJ = 25°C
100
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
25
RqJC = 2.0 °C/W
20 DC
15 Square Wave
10
5
0
80 90 100 110 120 130 140 150 160 170
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating
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Номер в каталоге | Описание | Производители |
NRVTS12120EMFS | Very Low Leakage Trench-based Schottky Rectifier | ON Semiconductor |
NRVTS12120EMFST1G | Very Low Leakage Trench-based Schottky Rectifier | ON Semiconductor |
NRVTS12120EMFST3G | Very Low Leakage Trench-based Schottky Rectifier | ON Semiconductor |
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