K2354 PDF даташит
Спецификация K2354 изготовлена «NEC» и имеет функцию, называемую «MOSFET ( Transistor ) - 2SK2354». |
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Детали детали
Номер произв | K2354 |
Описание | MOSFET ( Transistor ) - 2SK2354 |
Производители | NEC |
логотип |
8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)
2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3.
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.5
A
Drain Current (pulse)*
ID(pulse) ±18
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
30 W
Total Power Dissipation (Ta = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 4.5 A
Single Avalanche Energy**
EAS 17.4 mJ
1 23
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Source
Document No. TC-2499
(O. D. No. TC-8047)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
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2SK2353/2SK2354
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
SYMBOL
RDS(on)
MIN.
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
2.5
1.0
TYP.
1.0
1.1
670
140
18
11
8
40
8
20
4.5
9
1.0
270
1.0
MAX.
1.4
1.5
3.5
100
±100
UNIT
Ω
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = 10 V 2SK2353
ID = 2.5 A 2SK2354
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.5 A
VDS = VDSS, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2.5 A
VGS(on) = 10 V
VDD = 150 V
RG = 10 Ω RL = 60 Ω
ID = 4.5 A
VDD = 400 V
VGS = 10 V
IF = 4.5 A, VGS = 0
IF = 4.5 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
PG
VGS = 20 - 0 V
D.U.T.
RG = 25 Ω
50 Ω
L
VDD
D.U.T.
RG
PG. RG = 10 Ω
ID
VDD
IAS
BVDSS
VDS
Starting Tch
VGS
0
t
t = 1 µs
Duty Cycle ≤ 1 %
Test Circuit 3 Gate Charge
RL
VDD
VGS
Wave
Form
VGS
10 %
0
90 %
VGS (on)
ID 90 %
ID
Wave
Form
10 %
0
td (on)
ID
tr td (off)
90 %
10 %
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
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2SK2353/2SK2354
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10 RD(aSt(oVn)GLSim= i1te0dV)
ID (DC)
ID (pulse) PW
100 = 10 µs
1ms s
1.0
0.1
Power
Tc = 25 ˚C
Single Pulse
Dissipat1io0n0
10 ms
ms
Limited
2SK2354
2SK2353
1 10 100 1000
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10 10 V
8
VGS = 20 V
8V
6
4 VGS = 6 V
2
0 4 8 12 16
VDS - Drain to Source Voltage - V
1
0.1
0.05
0
Ta = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
5 10
VGS - Gate to Source Voltage - V
15
3
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