DataSheet26.com

LDTB114EET1G PDF даташит

Спецификация LDTB114EET1G изготовлена ​​​​«LRC» и имеет функцию, называемую «Bias Resistor Transistor».

Детали детали

Номер произв LDTB114EET1G
Описание Bias Resistor Transistor
Производители LRC
логотип LRC логотип 

3 Pages
scroll

No Preview Available !

LDTB114EET1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
VCC
VIN
IC
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
Limits
50
40 to +10
500
200
150
55 to +150
Unit
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114EET1G
Q6
10 10 3000/Tape & Reel
LDTB114EET3G
Q6
10 10 10000/Tape & Reel
LDTB114EET1G
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
Output voltage
Input current
Output current
DC current gain
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
3
56
Input resistance
R1 7
Resistance ratio
Transition frequency
Characteristics of built-in transistor
R2/R1
fT
0.8
Typ.
0.1
10
1
200
Max.
0.5
0.3
0.88
0.5
13
1.2
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 10mA
IO/II= 50mA/2.5mA
VI= 5V
VCC= 50V, VI=0V
VO= 5V, IO= 50mA
VCE= 10V, IE=50mA, f=100MHz
1/3









No Preview Available !

LDTB114EET1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LDTB114EET1G
zElectrical characteristic curves
-100 VO= 0.3V
-50
-20
-10
-5
-2
-1
-500m
Ta= 40 C
25 C
100 C
-200m
-100m
-500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
-10m
-5m Ta= 100 C
-2m
25 C
40 C
-1m
-500µ
-200µ
VCC= 5V
-100µ
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0 -0.5 -1 -1.5 -2 -2.5 -3
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
-1
-500m
Ta=100 C
-200m 25 C
40 C
-100m
-50m
lO/lI=20
-20m
-10m
-5m
-2m
-1m
-500µ -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
1k
500
200 Ta=100 C
25 C
100 40 C
50
VO= 5V
20
10
5
2
1
-500µ -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
2/3









No Preview Available !

LDTB114EET1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LDTB114EET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3










Скачать PDF:

[ LDTB114EET1G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
LDTB114EET1GBias Resistor TransistorLRC
LRC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск