LDTB123YET3G PDF даташит
Спецификация LDTB123YET3G изготовлена «LRC» и имеет функцию, называемую «Bias Resistor Transistor». |
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Детали детали
Номер произв | LDTB123YET3G |
Описание | Bias Resistor Transistor |
Производители | LRC |
логотип |
3 Pages
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTB123YET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
VCC
VIN
IC
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
Limits
−50
−12 to +5
−500
200
150
−55 to +150
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
Unit EMITTER
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB123YET1G
K9
2.2 10 3000/Tape & Reel
LDTB123YET3G
K9
2.2 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
−
−2
−
−
−
56
1.54
3.6
−
Typ.
−
−
−0.1
−
−
−
2.2
4.5
200
Max.
−0.3
−
−0.3
−3.0
−0.5
−
2.86
5.5
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −50mA/−2.5mA
VI= −5V
VCC= −50V, VI= 0V
VO= −5V, IO= −50mA
−
−
VCE= −10V, IE= 50mA, f= 100MHz ∗
1/3
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LESHAN RADIO COMPANY, LTD.
LDTB123YET1G
zElectrical characteristic curves
-100
VO= −0.3V
-50
-20
-10
-5
Ta= −40°C
-2
25 °C
100 °C
-1
-500m
-200m
-100m
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
-10m
-5m VCC= −5V
-2m
-1m
-500µ Ta=100°C
-200µ 25°C
-100µ −40°C
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100°C
200 25°C
−40°C
100
50
VO= −5V
20
10
5
2
1
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
-1
-500m
-200m
Ta=100°C
25°C
-100m −40°C
-50m
lO/lI=20
-20m
-10m
-5m
-2m
-1m
-0.5m -1m -2m
-5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
2/3
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LESHAN RADIO COMPANY, LTD.
LDTB123YET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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LDTB123YET3G | Bias Resistor Transistor | LRC |
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DataSheet26.com | 2020 | Контакты | Поиск |