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LDTB123YET3G PDF даташит

Спецификация LDTB123YET3G изготовлена ​​​​«LRC» и имеет функцию, называемую «Bias Resistor Transistor».

Детали детали

Номер произв LDTB123YET3G
Описание Bias Resistor Transistor
Производители LRC
логотип LRC логотип 

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LDTB123YET3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTB123YET1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
VCC
VIN
IC
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
Limits
50
12 to +5
500
200
150
55 to +150
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
Unit EMITTER
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB123YET1G
K9
2.2 10 3000/Tape & Reel
LDTB123YET3G
K9
2.2 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
2
56
1.54
3.6
Typ.
0.1
2.2
4.5
200
Max.
0.3
0.3
3.0
0.5
2.86
5.5
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 20mA
IO/II= 50mA/2.5mA
VI= 5V
VCC= 50V, VI= 0V
VO= 5V, IO= 50mA
VCE= 10V, IE= 50mA, f= 100MHz
1/3









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LDTB123YET3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LDTB123YET1G
zElectrical characteristic curves
-100
VO= 0.3V
-50
-20
-10
-5
Ta= 40°C
-2
25 °C
100 °C
-1
-500m
-200m
-100m
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
-10m
-5m VCC= 5V
-2m
-1m
-500µ Ta=100°C
-200µ 25°C
-100µ 40°C
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100°C
200 25°C
40°C
100
50
VO= 5V
20
10
5
2
1
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
-1
-500m
-200m
Ta=100°C
25°C
-100m 40°C
-50m
lO/lI=20
-20m
-10m
-5m
-2m
-1m
-0.5m -1m -2m
-5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
2/3









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LDTB123YET3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LDTB123YET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3










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Номер в каталогеОписаниеПроизводители
LDTB123YET3GBias Resistor TransistorLRC
LRC

Номер в каталоге Описание Производители
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STMicroelectronics

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