LDTB114GKT1G PDF даташит
Спецификация LDTB114GKT1G изготовлена «LRC» и имеет функцию, называемую «Bias Resistor Transistor». |
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Детали детали
Номер произв | LDTB114GKT1G |
Описание | Bias Resistor Transistor |
Производители | LRC |
логотип |
3 Pages
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Each pin mounted on the recommended land
Symbol
VCBO
VCEO
VEBO
IC
Pd ∗
Tj
Tstg
Limits
−50
−50
−5
−500
200
150
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
Unit
V
V
V
mA
mW
C
C
LDTB114GKT1G
K7
10 3000/Tape & Reel
LDTB114GKT3G
K7
10 10000/Tape & Reel
LDTB114GKT1G
3
1
2
SC-89
1
BASE R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCEO
BVEBO
ICBO
Emitter cutoff curren
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Input resistance
R
Transition frequency
fT ∗
∗Characteristics of built-in transistor
Min.
−50
−50
−5
−
−
−
56
7
−
Typ.
−
−
−
−
−
−
−
10
200
Max.
−
−
−
−0.5
−580
−0.3
−
13
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC= −50µA
IC= −1mA
IE= −720µA
VCB= −50V
VEB= −4V
IC/IB= −50mA/−2.5mA
IC= −50mA , VCE= −5V
−
VCE= −10V , IE=50mA , f=100MHz
1/3
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LESHAN RADIO COMPANY, LTD.
LDTB114GKT1G
zElectrical characteristic curves
1000
VCE=5V
500
200
100
50
20
10
5
Ta=25°C
Ta=100°C
Ta= −40°C
2
1
−500µ −1m −2m −5m −10m −20m −50m−100m −200m −500m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current transfer ratio
vs. Collector current
−1
IC/IB=20
−500m
−200m
−100m
−50m
−20m
−10m
−5m
Ta=100°C
Ta=25°C
Ta= −40°C
−2m
−1m
−500µ −1m −2m
−5m −10m −20m −50m−100m −200m −500m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/3
No Preview Available ! |
LESHAN RADIO COMPANY, LTD.
LDTB114GKT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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LDTB114GKT1G | Bias Resistor Transistor | LRC |
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DataSheet26.com | 2020 | Контакты | Поиск |