LDTB143TKT1G PDF даташит
Спецификация LDTB143TKT1G изготовлена «LRC» и имеет функцию, называемую «Bias Resistor Transistor». |
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Детали детали
Номер произв | LDTB143TKT1G |
Описание | Bias Resistor Transistor |
Производители | LRC |
логотип |
3 Pages
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTB143TKT1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−40
−5
−500
200
150
−55 to +150
Unit
V
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB143TKT1G
K2
4.7
3000/Tape & Reel
LDTB143TKT3G
K2
4.7
10000/Tape & Reel
3
1
2
SC-89
1
BASE
R1
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −5 − − V IE= −50µA
Collector cutoff current
ICBO − − −0.5 µA VCB= −50V
Emitter cutoff current
IEBO − − −0.5 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − − −0.3 V IC/IB= −50mA/−2.5mA
DC current transfer ratio
hFE 100 250 600 − VCE= −5V, IC= −50mA
Input resistance
R1 3.29 4.7 6.11 kΩ
−
Transition frequency
∗ Characteristics of built-in transistor
fT ∗ − 200 − MHz VCE= −10V, IE=50mA, f=100MHz
1/3
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zElectrical characteristic curves
1k
VCE= −5V
500
200
100
Ta=100 C
25 C
50 −40 C
20
10
5
2
1
-0.5m -1m -2m
-5m -10m -20m -50m -100m -200m -500m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collectorcurrent
LESHAN RADIO COMPANY, LTD.
LDTB143TKT1G
-1
lC/lB=20
-500m
-200m Ta=100 C
25 C
-100m −40 C
-50m
-20m
-10m
-5m
-2m
-1m
-0.5m -1m -2m
-5m -10m -20m -50m -100m -200m -500m
COLLECTOR CURRENT : IC (A)
Fig.2Collector-emitter saturation
voltage vs. collector current
2/3
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LESHAN RADIO COMPANY, LTD.
LDTB143TKT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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LDTB143TKT1G | Bias Resistor Transistor | LRC |
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