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PDF LDTD143TKT1G Data sheet ( Hoja de datos )

Número de pieza LDTD143TKT1G
Descripción Bias Resistor Transistor
Fabricantes LRC 
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No Preview Available ! LDTD143TKT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTD143TKT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
50
40
5
500
200
150
55 to +150
Unit
V
V
V
mA
mW
C
C
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD143TKT1G
E2
4.7 _ 3000/Tape & Reel
LDTD143TKT1G
E2
4.7 _ 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 40
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE 100
Input resistance
R1 3.29
Transition frequency
Characteristics of built-in transistor
fT
Typ.
250
4.7
200
Max. Unit
Conditions
V IC=50µA
V IC=1mA
V IE=50µA
0.5 µA VCB=50V
0.5 µA VEB=4V
0.3 V IC/IB=50mA/2.5mA
600 VCE=5V, IC=50mA
6.11 k
MHz VCE=10V, IE= 50mA, f=100MHz
1/3

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