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LDTA115GET3G PDF даташит

Спецификация LDTA115GET3G изготовлена ​​​​«LRC» и имеет функцию, называемую «Bias Resistor Transistor».

Детали детали

Номер произв LDTA115GET3G
Описание Bias Resistor Transistor
Производители LRC
логотип LRC логотип 

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LDTA115GET3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
LDTA115GET1G
3
1
2
SC-89
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA115GET1G
Q4
100 3000/Tape & Reel
LDTA115GET3G
Q4
100 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
Conditions
50 − − V IC= −50 µA
50 − − V IC= −1mA
5 − − V IE= −72 µA
0.5
µA VCB= −50V
30 − −58 µA VEB= −4V
− − −0.3 V IC= −5mA, IB= −0.25mA
82 − − − IC= −5mA, VCE= −5V
70 100 130 k
250 MHz VCE= −10V, IE=5mA, f=100MHz
1/3









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LDTA115GET3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LDTA115GET1G
zElectrical characteristic curves
1k
VCE=5V
500
200
100
50
20
10
5
Ta=25°C
Ta=100°C
Ta= −40°C
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
1
IC/IB=20/1
500m
200m
100m
50m
20m
10m
5m
Ta=100°C
Ta=25°C
Ta= −40°C
2m
1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
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LDTA115GET3G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LDTA115GET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3










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Номер в каталогеОписаниеПроизводители
LDTA115GET3GBias Resistor TransistorLRC
LRC

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