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SURS8360T3G PDF даташит

Спецификация SURS8360T3G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Surface Mount Ultrafast Power Rectifiers».

Детали детали

Номер произв SURS8360T3G
Описание Surface Mount Ultrafast Power Rectifiers
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SURS8360T3G Даташит, Описание, Даташиты
MURS320T3G, SURS8320T3G,
MURS340T3G, SURS8340T3G,
MURS360T3G, SURS8360T3G
Surface Mount
Ultrafast Power Rectifiers
This series employs the stateoftheart epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for high
voltage, high frequency rectification, or as free wheeling and
protection diodes, in surface mount applications where compact size
and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop
(0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C)
SURS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These are PbFree Devices
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 217 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 16 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model, C (> 400 V)
Human Body Model, 3B (> 8 kV)
http://onsemi.com
ULTRAFAST
RECTIFIERS
3.0 AMPERES
200600 VOLTS
SMC
CASE 403
PLASTIC
MARKING DIAGRAM
AYWW
U3x
U3 = Specific Device Code
x = D (320T3)
= G (340T3)
= J (360T3)
A = Assembly Location
Y = Year
WW= Work Week
ORDERING INFORMATION
Device
MURS320T3G
SURS8320T3G
MURS340T3G
SURS8340T3G
MURS360T3G
SURS8360T3G
Package
SMC
(PbFree)
SMC
(PbFree)
SMC
(PbFree)
SMC
(PbFree)
SMC
(PbFree)
SMC
(PbFree)
Shipping
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 13
1
Publication Order Number:
MURS320T3/D









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SURS8360T3G Даташит, Описание, Даташиты
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
MAXIMUM RATINGS
Rating
Symbol
MURS320T3G/
SURS8320T3G
MURS340T3G/
SURS8340T3G
MURS360T3G/
SURS8360T3G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
VRRM
VRWM
VR
IF(AV)
200 400 600
3.0
4.0
@
@
TTLL
=
=
140°C
130°C
3.0
4.0
@
@
TTLL
=
=
130°C
115°C
3.0
4.0
@
@
TTLL
=
=
130°C
115°C
V
A
NonRepetitive Peak Surge Current
IFSM
A
(Surge applied at rated load conditions halfwave,
100
single phase, 60 Hz)
Operating Junction Temperature
TJ
*65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoLead
RqJL
11 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 A, TJ = 25°C)
(iF = 4.0 A, TJ = 25°C)
(iF = 3.0 A, TJ = 150°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
vF
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
(iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A)
Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V)
trr
tfr
Typical Peak Reverse Recovery Current
(IF = 1.0 A, di/dt = 50 A/ms)
IRM
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
0.875
0.89
0.71
5.0
150
35
25
25
0.8
1.25
1.28
1.05
10
250
75
50
50
V
1.25
1.28
1.05
mA
10
250
ns
75
50
ns
50
A
http://onsemi.com
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SURS8360T3G Даташит, Описание, Даташиты
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
MURS320T3G/SURS8320T3G
5.0
3.0
TJ = 175°C
100°C
2.0
25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.2
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.08
0.04
0.02
0.008
0.004
0.002
TJ = 175°C
TJ = 100°C
TJ = 25°C
0 20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
10
9.0
8.0
7.0
(CAPACITIVE LOAD)
IPK
IAV
+
20
6.0
5.0
10
5.0
4.0 dc
3.0
2.0 SQUARE WAVE
1.0
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Power Dissipation
10
9.0 RATED VOLTAGE APPLIED
RqJL = 11°C/W
8.0 TJ = 175°C
7.0
6.0
5.0
4.0
3.0 dc
2.0
1.0 SQUARE WAVE
0
90 100 110 120 130 140 150 160 170 180 190
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case
200
TYPICAL CAPACITANCE AT 0 V = 135 pF
100
80
60
40
30
20
10
0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
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Номер в каталогеОписаниеПроизводители
SURS8360T3GSurface Mount Ultrafast Power RectifiersON Semiconductor
ON Semiconductor

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