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PDF AUIRLR014N Data sheet ( Hoja de datos )
| Número de pieza | AUIRLR014N | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRLR014N (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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AUTOMOTIVEGRADE
PD - 97740
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
AUIRLR014N
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
S ID
55V
0.14
10A
G
Gate
D
S
G
D-Pak
AUIRLR014N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÃAvalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
gRJC
Junction-to-Case
hRJA Junction-to-Ambient (PCB mount)
RJA Junction-to-Ambient
10
7.1
40
28
0.2
± 16
35
6.0
2.8
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
5.3
50
110
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/10/11
1 page  
AUIRLR014N
500
400 Ciss
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
300 Coss
200
Crss
100
0
1 10 100
VDS , Drain-to-Source Voltage (V)
15 ID = 6 A
10
VVDDSS
=
=
44V
27V
5
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 2 4 6 8 10
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 175° C
1
0.1
0.2
TJ = 25° C
VGS = 0 V
0.6 1.0 1.4
VSD ,Source-to-Drain Voltage (V)
1.8
1000
100
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100us
1ms
1
10ms
TC
TJ
=
=
25 ° C
175 ° C
Single Pulse
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
AUIRLR014N
Ordering Information
Base part
number
AUIRLR014N
Package Type Standard Pack
Dpak
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRLR014N
AUIRLR014NTR
AUIRLR014NTRL
AUIRLR014NTRR
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRLR014N.PDF ] | |
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