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RJK0659DPA PDF даташит

Спецификация RJK0659DPA изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «N Channel Power MOS FET».

Детали детали

Номер произв RJK0659DPA
Описание N Channel Power MOS FET
Производители Renesas Technology
логотип Renesas Technology логотип 

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RJK0659DPA Даташит, Описание, Даташиты
RJK0659DPA
60V, 30A, 8.0mmax.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
4321
4
G
Preliminary Datasheet
R07DS0345EJ0300
Rev.3.00
Apr 09, 2013
5 678
D DDD
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
60
20
30
120
30
15
16.9
55
2.27
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0345EJ0300 Rev.3.00
Apr 09, 2013
Page 1 of 6









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RJK0659DPA Даташит, Описание, Даташиты
RJK0659DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
V ID = 10 mA, VGS = 0 V
Gate to source leak current
IGSS — — 0.1 A VGS = 20 V, VDS = 0 V
Zero gate voltage drain current
IDSS — — 1 A VDS = 60 V, VGS = 0 V
Gate to source cutoff voltage
VGS(off)
2.0
4.0
V VDS = 10 V, ID = 1 mA
Static drain to source on state resistance RDS(on) — 6.5 8.0 mID = 15 A, VGS = 10 V Note4
Forward transfer admittance
|yfs| — 47 — S ID = 15 A, VDS = 10 V Note4
Input capacitance
Output capacitance
Ciss
Coss
— 2400 —
— 550 —
pF VDS = 10 V, VGS = 0 V,
pF f = 1 MHz
Reverse transfer capacitance
Crss
— 150 —
pF
Gate Resistance
Rg
— 1.3 —
Total gate charge
Gate to source charge
Qg
— 30.6 —
nC VDD = 25 V, VGS = 10 V,
Qgs — 13 — nC ID = 30 A
Gate to drain charge
Qgd — 5.1 — nC
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
— 14 — ns VGS = 10 V, ID = 15 A,
— 12 — ns VDD 30 V, RL = 2 ,
— 40 — ns Rg = 4.7
Fall time
Body–drain diode forward voltage
tf — 10 — ns
VDF
— 0.8 1.1
V IF = 30 A, VGS = 0 V Note4
Body–drain diode reverse recovery time trr — 47 — ns IF = 30 A, VGS = 0 V
diF/ dt = 100 A/ s
Notes: 4. Pulse test
R07DS0345EJ0300 Rev.3.00
Apr 09, 2013
Page 2 of 6









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RJK0659DPA Даташит, Описание, Даташиты
RJK0659DPA
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
5.2 V 5 V
6V
40
7 V, 10 V
Pulse Test
4.8 V
30
4.6 V
20
VGS = 4.4 V
10
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
ID = 20 A
100
5 A 10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
R07DS0345EJ0300 Rev.3.00
Apr 09, 2013
Preliminary
Maximum Safe Operation Area
1000
Tc = 25°C
1 shot Pulse
100
10 μs
10
1 ms
1
PW = 10 ms
Operation in
0.1 this area is
limited by RDS(on) DC Operation
0.01
0.1
1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
25°C
10 –25°C
0 2468
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
10 VGS = 10 V
1
0.1
1 10 100 1000
Drain Current ID (A)
Page 3 of 6










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Номер в каталогеОписаниеПроизводители
RJK0659DPAN Channel Power MOS FETRenesas Technology
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