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FDD8N50NZ PDF даташит

Спецификация FDD8N50NZ изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel UniFET II MOSFET».

Детали детали

Номер произв FDD8N50NZ
Описание N-Channel UniFET II MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDD8N50NZ Даташит, Описание, Даташиты
FDD8N50NZ
N-Channel UniFETTM II MOSFET
500 V, 6.5 A, 850 mΩ
Features
• RDS(on) = 770 mΩ (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFETTM II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Parameter
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD8N50NZTM
500
±25
6.5
3.9
26
287
6.5
9
10
90
0.7
-55 to +150
300
FDD8N50NZTM
1.4
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C1
1
www.fairchildsemi.com









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FDD8N50NZ Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FDD8N50NZTM
Top Mark
FDD8N50NZ
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125oC
VGS = ±25 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 3.25 A
VDS = 20 V, ID = 3.25 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, ID = 6.5 A,
VGS = 10 V
(Note 4)
Min.
500
-
-
-
-
3.0
-
-
-
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.77
6.3
565
80
5
14
4
6
Max. Unit
-V
- V/oC
1
10
μA
±10 μA
5.0 V
0.85 Ω
-S
735 pF
105 pF
8 pF
18 nC
- nC
- nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 6.5 A,
RG = 25 Ω, VGS = 10 V
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 6.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 6.5 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 13.6 mH, IAS = 6.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 6.5 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
-
-
-
-
17 45 ns
34 80 ns
43 95 ns
27 60 ns
- 8A
- 30 A
- 1.4 V
228 - ns
1.43 - μC
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C1
2
www.fairchildsemi.com









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FDD8N50NZ Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 VGS = 15.0 V
10.0 V
10 8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.03
0.03
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1 1
VDS, Drain-Source Voltage[V]
10 20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.6
1.2
VGS = 10V
VGS = 20V
0.8
0.4
0
*Note: TC = 25oC
3 6 9 12 15 18
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
1200
900
600
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
300
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
30
10
150oC
-55oC
1 25oC
0.1
2
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
468
VGS, Gate-Source Voltage[V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.4 0.8 1.2 1.6 2.0 2.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
8 VDS = 250V
VDS = 400V
6
4
2
0 *Note: ID = 6.5A
0 3 6 9 12 15
Qg, Total Gate Charge [nC]
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C1
3
www.fairchildsemi.com










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Номер в каталогеОписаниеПроизводители
FDD8N50NZN-Channel UniFET II MOSFETFairchild Semiconductor
Fairchild Semiconductor

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