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RJK03N6DPA PDF даташит

Спецификация RJK03N6DPA изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Built in SBD N Channel Power MOS FET».

Детали детали

Номер произв RJK03N6DPA
Описание Built in SBD N Channel Power MOS FET
Производители Renesas Technology
логотип Renesas Technology логотип 

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RJK03N6DPA Даташит, Описание, Даташиты
RJK03N6DPA
30V, 40A, 3.8mmax.
Built in SBD N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
Preliminary Datasheet
R07DS0787EJ0200
Rev.2.00
Feb 12, 2013
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
5 678
D DDD
4321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
40
160
40
14
19.6
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0787EJ0200 Rev.2.00
Feb 12, 2013
Page 1 of 6









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RJK03N6DPA Даташит, Описание, Даташиты
RJK03N6DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
3.1
4.0
72
2300
410
240
2.1
19.0
7.2
6.0
4.1
3.2
45.7
15.2
0.41
7.7
Max
± 0.5
1
2.5
3.8
5.2
3220
4.2
Preliminary
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 20 A, VGS = 10 V Note4
ID = 20 A, VGS = 4.5 V Note4
ID = 20 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 40 A
VGS = 10 V, ID = 20 A
VDD 10 V
RL = 0.5
Rg = 4.7
IF = 2 A, VGS = 0 Note4
IF =40 A, VGS = 0
diF/ dt = 500 A/ s
R07DS0787EJ0200 Rev.2.00
Feb 12, 2013
Page 2 of 6









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RJK03N6DPA Даташит, Описание, Даташиты
RJK03N6DPA
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
4.5 V
10 V
40
Pulse Test
2.7 V
2.5 V
30
20 2.4 V
10
VGS = 2.3 V
0
24
6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
160
120
80 ID = 20 A
40 10 A
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
R07DS0787EJ0200 Rev.2.00
Feb 12, 2013
Preliminary
Maximum Safe Operation Area
1000
100 1 ms
10 PW = 10 ms
Operation in
1 this area is
limited by RDS(on)
Tc = 25 °C
0.1 1 shot Pulse
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 5 V
Pulse Test
40
30
20
10
Tc = 75°C
25°C
–25°C
0 1 2 34 5
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10
VGS = 4.5 V
3
10 V
1
1 3 10 30 100 300 1000
Drain Current ID (A)
Page 3 of 6










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Номер в каталогеОписаниеПроизводители
RJK03N6DPABuilt in SBD N Channel Power MOS FETRenesas Technology
Renesas Technology

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