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PDF AUIRLR2703 Data sheet ( Hoja de datos )
| Número de pieza | AUIRLR2703 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVEGRADE
PD - 97620
AUIRLR2703
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
30V
RDS(on) max.
45mΩ
ID (Silicon Limited)
S ID (Package Limited)
23A
20A
D
S
G
D-Pak
AUIRLR2703
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
16 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
20
96
PD @TC = 25°C Power Dissipation
Linear Derating Factor
45 W
0.30 W/°C
VGS
EAS
EAS (tested )
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery
± 16 V
77 mJ
200
14 A
4.5 mJ
5.0 V/ns
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/11/2011
1 page  
AUIRLR2703
1000
800
600
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
400
Crss
200
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
15 I D = 14A
12
VDS = 24V
VDS = 15V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 4 8 12 16 20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 175°C
TJ = 25°C
10
1 VGS = 0V A
0.4 0.8 1.2 1.6 2.0 2.4
VSD , Source-to-Drain Voltage (V)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
100µs
10
1ms
TC = 25°C
STJing=le
175°C
Pulse
1
10ms
1 10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
AUIRLR2703
Ordering Information
Base part
number
AUIRLR2703
Package Type Standard Pack
Dpak
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRLR2703
AUIRLR2703TR
AUIRLR2703TRL
AUIRLR2703TRR
www.irf.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AUIRLR2703.PDF ] | |
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