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RJK0222DNS PDF даташит

Спецификация RJK0222DNS изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET».

Детали детали

Номер произв RJK0222DNS
Описание Silicon N Channel Power MOS FET
Производители Renesas Technology
логотип Renesas Technology логотип 

11 Pages
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RJK0222DNS Даташит, Описание, Даташиты
Preliminary Datasheet
RJK0222DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0125EJ0120
Rev.1.20
May 16, 2012
Application
DC-DC conversion for PC and Server.
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JD-A
(Package: HWSON3046-8)
5678
234
D1 D1 D1
9
S1/D2
5678
4321
1
G1
MOS1
8
G2
9 1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 
3. Tc = 25C
MOS1
25
±20
14
56
14
5
3.1
8
150
–55 to +150
Ratings
MOS2
25
±12
16
64
16
8
8.0
10
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0125EJ0120 Rev.1.20
May 16, 2012
Page 1 of 10









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RJK0222DNS Даташит, Описание, Даташиты
RJK0222DNS
Electrical Characteristics
• MOS1
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
25
1.2
Typ
7.6
10.5
30
810
130
74
1.2
6.2
2.8
1.9
7
4.1
33
5.1
0.84
20
Max
±0.1
1
2.5
9.2
13.7
1.10
Preliminary
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 25 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 7 A, VGS = 10 V Note4
ID = 7 A, VGS = 4.5 V Note4
ID = 7 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 4.5 V
ID = 14 A
VGS =10 V, ID = 7 A
VDD 10 V
RL = 1.42
Rg = 4.7
IF = 14 A, VGS = 0 Note4
IF =14 A, VGS = 0
diF/ dt = 100 A/s
R07DS0125EJ0120 Rev.1.20
May 16, 2012
Page 2 of 10









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RJK0222DNS Даташит, Описание, Даташиты
RJK0222DNS
Preliminary
• MOS2
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
trr
Min
25
1.2
Typ
4.9
6.2
39
1680
259
150
2.1
11.8
4.4
2.7
9.6
4.2
40
5
0.41
26
Max
±0.1
1
2.5
5.9
8.1
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 25 V, VGS = 0
VDS = 10 V, I D =1 mA
ID =8 A, VGS = 8.0 V Note4
ID = 8 A, VGS = 4.5 V Note4
ID = 8 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 4.5 V
ID = 16 A
VGS = 8 V, ID = 8 A
VDD 10 V
RL = 1.25
Rg = 4.7
IF = 2 A, VGS = 0 Note4
IF = 16 A, VGS = 0
diF/ dt = 100 A/s
R07DS0125EJ0120 Rev.1.20
May 16, 2012
Page 3 of 10










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