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IRF7815PbF PDF даташит

Спецификация IRF7815PbF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRF7815PbF
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

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IRF7815PbF Даташит, Описание, Даташиты
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low RDS(on) at 10V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
PD - 96284
IRF7815PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
:150V 43m @VGS = 10V 25nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Max.
150
± 20
5.1
4.1
41
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 9
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12/01/09









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IRF7815PbF Даташит, Описание, Даташиты
IRF7815PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgs
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
8.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.17
34
4.0
-12.2
–––
–––
–––
–––
–––
25
6.5
1.3
7.8
7.4
9.8
8..7
10
1.02
8.4
3.2
14
8.3
1647
129
30
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
e43 mVGS = 10V, ID = 3.1A
5.0
–––
V
mV/°C
VDS
=
VGS,
ID
=
100µA
20
250
100
-100
–––
38
µA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 50V, ID = 3.1A
––– VDS = 75V
––– VGS = 10V
––– nC ID = 3.1A
––– See Figs. 6, 16a & 16b
–––
–––
––– nC VDS = 16V, VGS = 0V
–––
e––– VDD = 75V, VGS = 10V
–––
–––
ns
ID = 3.1A
RG = 1.8
––– See Figs. 15a & 15b
––– VGS = 0V
––– pF VDS = 75V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
529
3.1
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
41
213
Max. Units
Conditions
MOSFET symbol
2.3
A
showing the
integral reverse
41
p-n junction diode.
e1.3 V TJ = 25°C, IS = 3.1A, VGS = 0V
e62 ns TJ = 25°C, IF = 3.1A, VDD = 75V
320 nC di/dt = 300A/µs
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IRF7815PbF Даташит, Описание, Даташиты
IRF7815PbF
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.01
0.1
5.0V
60µs PULSE WIDTH Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
VDS = 50V
60µs PULSE WIDTH
10
TJ = 150°C
1
TJ = 25°C
2.5
ID = 5.1A
VGS = 10V
2.0
1.5
1.0
0.1
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3










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Номер в каталогеОписаниеПроизводители
IRF7815PbFPower MOSFET ( Transistor )International Rectifier
International Rectifier

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