LDTC123YET1G PDF даташит
Спецификация LDTC123YET1G изготовлена «LRC» и имеет функцию, называемую «Bias Resistor Transistor». |
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Детали детали
Номер произв | LDTC123YET1G |
Описание | Bias Resistor Transistor |
Производители | LRC |
логотип |
3 Pages
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
Pd
Tj
Tstg
Limits
50
−5 to +12
100
100
200
150
−55 to +150
LDTC123YET1G
3
1
2
SC-89
1
BASE
R1
R2
Unit
V
V
mA
mW
°C
°C
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC123YET1G
N8
2.2 10
3000/Tape & Reel
LDTC123YET3G
N8
2.2 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off)
VI(on)
−
3
Output voltage
VO(on)
−
Input current
II −
Output current
IO(off)
−
DC current gain
GI 33
Input resistance
R1 1.54
Resistance ratio
Transition frequency
R2/R1
fT ∗
3.6
−
∗ Characteristics of built-in transistor
Typ.
−
−
0.1
−
−
−
2.2
4.5
250
Max.
0.3
−
0.3
3.8
0.5
−
2.86
5.5
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=10mA
−
−
VCE=10V, IE= −5mA, f=100MHz
1/3
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z Electrical characteristic curves
LESHAN RADIO COMPANY, LTD.
LDTC123YET1G
2/3
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LESHAN RADIO COMPANY, LTD.
LDTC123YET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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Номер в каталоге | Описание | Производители |
LDTC123YET1G | Bias Resistor Transistor | LRC |
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DataSheet26.com | 2020 | Контакты | Поиск |